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參數(shù)資料
| 型號(hào)： | MB90F809PF-G |
| 元件分類(lèi)： | 微控制器/微處理器 |
| 英文描述： | 16-BIT, FLASH, 25 MHz, MICROCONTROLLER, PQFP100 |
| 封裝： | 14 X 20 MM, 3.35 MM HEIGHT, 0.65 MM PITCH, PLASTIC, QFP-100 |
| 文件頁(yè)數(shù)： | 84/92頁(yè) |
| 文件大?。?/td> | 2250K |
| 代理商： | MB90F809PF-G |
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MB90800 Series
DS07-13733-5E
85
7.
Flash Memory (MB90F804-101/201, MB90F809/S)
* : This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at
+ 85 °C).
8.
Dual Operation Flash Memory (MB90F803/S)
* : This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at
+ 85 °C).
Parameter
Conditions
Value
Unit
Remarks
Min
Typ
Max
Sector erase time
TA
= + 25 °C
Vcc
= 3.0 V
115
s
Excludes 00H programming
prior to erasure.
Chip erase time
9
Word (16-bit width)
programming time
16
3600
s
Except for the over head time
of the system.
Program/erase cycle
10000
cycle
Flash memory data
retention time
Average
TA
= + 85 °C
20
year
*
Parameter
Conditions
Value
Unit
Remarks
Min
Typ
Max
Sector erase time
(4 Kbytes sector )
TA
= +25 °C
Vcc
= 3.0 V
0.2
0.5
s
Excludes 00H programming
prior to erasure.
Sector erase time
(16 Kbytes sector)
0.5
7.5
Chip erase time
4.6
Word (16-bit width)
programming time
64
3600
s
Except for the over head time
of the system.
Program/erase cycle
10000
cycle
Flash memory data
retention time
Average
TA
= + 85 °C
20
year
*
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|---|---|
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