參數(shù)資料
型號： MB84VP24491HK-70PBS
廠商： Fujitsu Limited
英文描述： RES NET BUSSED 150 OHM 6-SIP
中文描述： 128M的（x16）的快閃記憶體32M的（x16）的移動FCRAMTM
文件頁數(shù)： 49/70頁
文件大?。?/td> 1272K
代理商： MB84VP24491HK-70PBS
MB84VP24491HK
-70
48
POWER DOWN PARAMETERS (32M Page mode FCRAM)
*1 : Applicable also to power-up.
*2 : Applicable when 4M, 8M, and 16M Partial mode is programmed.
OTHER TIMING PARAMETERS (32M Page mode FCRAM)
*1 : Some data might be written into any address location if t
CHWX
(Min) is not satisfied.
*2 : The Input Transition Time (t
T
) at AC testing is 5 ns as shown in below. If actual t
T
is longer than 5ns,
it may violate AC specification of some timing parameters.
AC TEST CONDITIONS (32M Page mode FCRAM)
Parameter
Symbol
Value
Unit
Remarks
Min
Max
CE2r Low Setup Time for Power Down Entry
t
CSP
10
—
ns
CE2r Low Hold Time after Power Down Entry
t
C2LP
70
—
ns
CE1r High Hold Time following CE2r High
after Power Down Exit [SLEEP mode only]
t
CHH
300
—
μ
s
*1
CE1r High Hold Time following CE2r High
after Power Down Exit [not in SLEEP mode]
t
CHHP
1
—
μ
s
*2
CE1r High Setup Time following CE2r High
after Power Down Exit
t
CHS
0
—
ns
Parameter
Symbol
Value
Unit
Remarks
Min
Max
CE1r High to OE Invalid Time for Standby Entry
t
CHOX
10
—
ns
CE1r High to WE Invalid Time for Standby Entry
t
CHWX
10
—
ns
*1
CE1r High Hold Time following CE2r High after Power-up
t
CHH
300
—
μ
s
Input Transition Time
t
T
1
25
ns
*2
Description
Symbol
Test Setup
Value
Unit
Remarks
Input High Level
V
IH
—
V
CC
r
V
Input Low Level
V
IL
—
V
SS
V
Input Timing Measurement Level
V
REF
—
V
CC
r × 0.5
V
Input Transition Time
t
T
Between V
IL
and V
IH
5
ns
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