參數(shù)資料
型號(hào)： MB84VD2002-10
廠商： FUJITSU LTD
元件分類： 存儲(chǔ)器
英文描述： Circular Connector; Body Material:Aluminum Alloy; Series:MS3110; No. of Contacts:19; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA48
封裝： PLASTIC, FBGA-48
文件頁數(shù)： 1/30頁
文件大?。?/td> 423K
代理商： MB84VD2002-10
DS05-50110-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
8M (
×
8/
×
16) FLASH MEMORY &
2M (
×
8) STATIC RAM
MB84VD2002
-10
/MB84VD2003
-10
I
FEATURES
Power supply voltage of 2.7 to 3.6 V
High performance
100 ns maximum access time
Operating Temperature
–20 to +85
°
C
— FLASH MEMORY
Simultaneous operations Read-while Erase or Read-while-Program
Minimum 100,000 write/erase cycles
Sector erase architecture
Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
MB84VD2002: Top sector
MB84VD2003: Bottom sector
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low V
CC
write inhibit
≤
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
Please refer to "MBM29DL800TA/BA" data sheet in detailed function
— SRAM
Power dissipation
Operating: 35 mA max.
Standby : 50
μ
A max.
Power down features using CE1s and CE2s
Data retention supply voltage: 2.0 V to 3.6 V
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相關(guān)PDF資料
PDF描述
MB84VD2002 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
MB84VD2003 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
MB84VD2003-10 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
MB84VD21081EM-70PBS 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
MB84VD21082EM-70PBS 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MB84VD2003 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
MB84VD2003-10 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
MB84VD2008 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
MB84VD2008-10 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
MB84VD2009 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
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