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參數(shù)資料
| 型號： | MAZZ056H |
| 廠商： | PANASONIC CORP |
| 元件分類： | 齊納二極管 |
| 英文描述： | 5.65 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | SMINI5-F1, 5 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MAZZ056H |
ESD Diodes
1
Publication date: November 2004
SKE00015DED
MAZZxxxH Series
Silicon planar type
For surge absorption circuit
■ Features
Four elements anode-common type
Power dissipation P
D : 200 mW
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter
Symbol
Rating
Unit
Power dissipation*
PD
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
■ Common Electrical Characteristics T
a = 25°C
± 3°C
Note) *:PD = 200 mW achieved with a printed circuit board.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Zener voltage *
VZ
IZ
Specified value
V
Zener rise operating resistance
RZK
IZ
Specified value
Zener operating resistance
RZ
IZ
Specified value
Reverse current
IR
VR
Specified value
A
(0.65) (0.65)
2.0±0.1
0.7±0.1
1.25
±
0.1
2.1
±
0.1
0.16
+0.1
–0.06
12
3
54
0.2±0.05
(0.425)
5
(0.15)
5
0
to
0.1
Refer to the list of the
electrical characteristics
within part numbers
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage:
±10 kV
Test method: IEC1000-4-2 (C
= 150 pF, R = 330 , Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
VZ guaranted 20 ms after current flow.
Internal Connection
1
4
2
3
5
1: Cathode 1
4: Cathode 3
2: Anode
5: Cathode 4
3: Cathode 2
SMini5-F1 Package
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