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參數(shù)資料
| 型號(hào)： | MAXIM6066 |
| 廠商： | Maxim Integrated Products, Inc. |
| 英文描述： | PLASTIC ENCAPSULATED DEVICES |
| 中文描述： | 塑封器件 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 92K |
| 代理商： | MAXIM6066 |
II. Manufacturing Information
A. Description/Function: Low-Cost, Micropower, Low-Dropout, High-Output-Current, SOT23 Voltage References
B. Process:
B12 (Standard 1.2 micron silicon gate CMOS)
C. Number of Device Transistors:
117
D. Fabrication Location: California or Oregon, USA
E. Assembly Location:
Malaysia or Thailand
III. Packaging Information
A. Package Type:
B. Lead Frame:
C. Lead Finish:
D. Die Attach:
E. Bondwire:
F. Mold Material:
G. Assembly Diagram:
H. Flammability Rating:
I. Classification of Moisture Sensitivity
per JEDEC standard JESD22-112: Level 1
IV. Die Information
A. Dimensions:
B. Passivation:
C. Interconnect:
D. Backside Metallization:
E. Minimum Metal Width:
F. Minimum Metal Spacing:
G. Bondpad Dimensions:
H. Isolation Dielectric:
I. Die Separation Method:
F. Date of Initial Production:
March, 2001
3-Pin SOT23
Copper or Alloy 42
Solder Plate
Silver-filled Epoxy
Gold (1.0 mil dia.)
Epoxy with silica filler
# 05-0901-0179
Class UL94-V0
44 x 31mils
Si
3
N
4
/SiO
2
(Silicon nitride/ Silicon dioxide)
Aluminum/Si (Si = 1%)
None
1.2 microns (as drawn)
1.2 microns (as drawn)
5 mil. Sq.
SiO
2
Wafer Saw
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