參數(shù)資料
型號： MAX9981
廠商： Maxim Integrated Products, Inc.
英文描述： 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer
中文描述： 825MHz至915MHz、雙路、SiGe高線性度有源混頻器
文件頁數(shù)： 2/15頁
文件大?。?/td> 409K
代理商： MAX9981
M
825MHz to 915MHz, Dual SiGe High-Linearity
Active Mixer
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
V
CC
........................................................................-0.3V to +5.5V
IFMAIN+, IFMAIN-, IFDIV+, IFDIV-,
MAINBIAS, DIVBIAS, LOSEL..................-0.3V to (V
CC
+ 0.3V)
TAPMAIN, TAPDIV..............................................................+5.5V
MAINBIAS, DIVBIAS Current ................................................5mA
RFMAIN, RFDIV, LO1, LO2 Input Power........................+20dBm
DC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
, V
CC
= +4.75V to +5.25V, no RF signals applied, all RF inputs and outputs terminated with 50
,
267
resistors connected from MAINBIAS and DIVBIAS to GND, T
A
= -40
°
C to +85
°
C, unless otherwise noted. Typical values are at
V
CC
= +5.0V, T
A
= +25
°
C, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Continuous Power Dissipation (T
A
= +70
°
C)
36-Pin QFN (derate 33mW/
°
C above +70
°
C)..............2200mW
Operating Temperature Range ...........................-40
°
C to +85
°
C
Junction Temperature......................................................+150
°
C
Storage Temperature Range.............................-65
°
C to +150
°
C
Lead Temperature (soldering, 10s).................................+300
°
C
PARAMETER
SYMBOL
V
CC
I
CC
V
IH
V
IL
I
LOSEL
CONDITIONS
MIN
4.75
260
3.5
TYP
5.00
291
MAX
5.25
325
UNITS
V
mA
V
V
μA
Supply Voltage
Supply Current
Input High Voltage
Input Low Voltage
LOSEL Input Current
0.4
+5
-5
AC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
, V
CC
= +4.75V to +5.25V, P
LO
= -5dBm to +5dBm, f
RF
= 825MHz to 915MHz, f
LO
= 725MHz to 1085MHz,
T
A
= -40
°
C to +85
°
C, unless otherwise noted. Typical values are at V
CC
= +5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 870MHz,
f
LO
= 770MHz, T
A
= +25
°
C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
SYMBOL
f
RF
f
LO
CONDITIONS
MIN
825
725
TYP
MAX
915
1085
UNITS
MHz
MHz
RF Frequency
LO Frequency
IF Frequency
f
IF
Must meet RF and LO frequency range. IF
matching components affect IF frequency
range.
70
170
MHz
LO Drive Level
P
LO
-5
+5
dBm
Cellular band,
f
RF
= 825MHz to
850MHz
GSM band,
f
RF
= 880MHz
to 915MHz
2.7
Conversion Gain (Note 3)
G
C
V
CC
= +5.0V,
f
IF
= 100MHz,
low-side injection,
P
RF
= 0dBm,
P
LO
= -5dBm
2.1
dB
Gain Variation from Nominal
f
RF
= 825MHz to 915MHz, 3
σ
Inject P
IN
= -20dBm at f
LO
+ 100MHz into
LO port. Measure 100MHz at IF port as
P
OUT
. No RF signal at RF port.
±0.6
dB
Conversion Loss from LO to IF
53
dB
Cellular band,
f
RF
= 825MHz to 850MHz
10.8
Noise Figure
NF
100MHz IF,
low-side
injection
GSM band,
f
RF
= 880MHz to 915MHz
11.9
dB
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參數(shù)描述
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MAX9981ETX+ 功能描述:射頻混合器 825-915MHz Dual SiGe Active Mixer RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉(zhuǎn)換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube
MAX9981ETX+D 功能描述:射頻混合器 825-915MHz Dual SiGe Active Mixer RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉(zhuǎn)換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube
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