參數(shù)資料
型號(hào): 2SK2124
廠商: PANASONIC CORP
元件分類: JFETs
英文描述: Silicon N-Channel Power F-MOS FET
中文描述: 8 A, 450 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220E
封裝: TO-220E, 3 PIN
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 43K
代理商: 2SK2124
2
Power F-MOS FETs
2SK2124
Area of safe operation (ASO)
P
D
Ta
EAS
T
j
I
D
V
DS
I
D
V
GS
V
th
T
C
R
DS(on)
I
D
R
DS(on)
I
D
| Y
fs
|
I
D
0
Drain to source voltage V
DS
(V)
10
20
30
40
50
60
0
16
12
4
10
14
8
2
6
V
GS
=15V
10V
6V
7V
5.5V
50W
5V
T
C
=25C
D
D
0
2
Drain current I
D
(A)
4
6
8
10
0
12
10
8
6
4
2
V
DS
=25V
T
C
=25C
F
f
|
0
10
8
2
Drain current I
D
(A)
6
4
0
2.4
2.0
1.6
1.2
0.8
0.4
V
GS
=10V
T
C
=150C
100C
25C
0C
D
D
)
0
10
8
2
Drain current I
D
(A)
6
4
0
2.4
2.0
1.6
1.2
0.8
0.4
T
C
=25C
V
GS
=10V
15V
D
D
)
0
Gate to source voltage V
GS
(V)
12
10
8
2
6
4
0
10
8
6
4
2
T
C
=0C
150C
100C
25C
V
DS
=25V
D
D
0
20
40
60
80 100 120 140 160
0
10
20
30
40
50
60
(1) T
=Ta
(2) Without heat sink
(P
D
=2W)
(1)
(2)
Ambient temperature Ta (C)
A
D
1
Drain to source voltage V
DS
(V)
10
100
3
30
300
1000
0.01
0.1
1
10
0.03
0.3
3
30
100
Non repetitive pulse
T
C
=25C
t=100
μ
s
10ms
1ms
DC
I
DP
I
D
D
D
25
50
75
100
125
150
175
0
40
80
120
160
200
240
V
DD
=50V
I
D
=8A
Junction temperature T
j
(C)
A
0
25
50
75
100
125
150
0
6
5
4
3
2
1
V
DS
=25V
I
D
=1mA
Case temperature T
C
(C)
G
t
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