- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371543 > 2SK2126 (PANASONIC CORP) Silicon N-Channel Power F-MOS FET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK2126 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Silicon N-Channel Power F-MOS FET |
| 中文描述： | 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220E |
| 封裝： | TO-220E, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | 2SK2126 |
1
Power F-MOS FETs
2SK2126
Silicon N-Channel Power F-MOS FET
unit: mm
I
Features
G
Avalanche energy capacity guaranteed: EAS > 100mJ
G
V
GSS
= ±30V guaranteed
G
High-speed switching: t
f
= 40ns
G
No secondary breakdown
I
Applications
G
Contactless relay
G
Diving circuit for a solenoid
G
Driving circuit for a motor
G
Control equipment
G
Switching power supply
1: Gate
2: Drain
3: Source
TO-220E Package
I
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
Conditions
V
DS
= 400V, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 3A
V
DS
= 25V, I
D
= 3A
I
DR
= 5A, V
GS
= 0
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 3A
V
DD
= 150V, R
L
= 50
min
500
2
2
typ
1.35
3.5
700
100
35
20
40
40
80
max
0.1
±1
5
1.7
1.6
2.5
Unit
mA
μ
A
V
V
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
I
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
500
±30
±5
±10
100
50
2
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 8mH, I
L
= 5A, V
DD
= 50V, 1 pulse
9.9±0.3
2
3
1
4.6±0.2
2.9±0.2
2.6±0.1
2.54±0.2
5.08±0.4
0.75±0.1
1.2±0.15
1.45±0.15
1
1
+
–
φ
3.2±0.1
3
8
4
S
0.7±0.1
7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2128 | Silicon N-Channel Power F-MOS FET |
| 2SK2129 | Silicon N-Channel Power F-MOS FET |
| 2SK212 | N-Channel Junction Silicon FET(FM Tuner Applications) |
| 2SK2130 | Silicon N-Channel Power F-MOS FET |
| 2SK2145 | N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2126001MC | 制造商:Panasonic Industrial Company 功能描述: |
| 2SK2127 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK2128 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK2129 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK212C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 600NA I(DSS) | SPAK |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。