
M
2:1 Multiplexers and 1:2 Demultiplexers with
Loopback
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
V
CC
to GND...........................................................-0.3V to +4.1V
IN_ _,
IN_ _
, OUT_ _,
OUT_ _
, EN_ _, _SEL, LB_SEL_
to GND........................................................-0.3V to (V
CC
+ 0.3V)
IN_ _ to
IN_ _
..........................................................................±3V
Short-Circuit Duration (OUT_ _,
OUT_ _
) ...................Continuous
Continuous Power Dissipation (T
A
= +70
°
C)
32-Pin TQFP (derate 13.1mW/
°
C above +70
°
C)........1047mW
28-Pin 5mm x 5mm Thin QFN
(derate 20.8mW/
°
C above +70
°
C).............................1667mW
Junction-to-Ambient Thermal Resistance in Still Air
32-Pin TQFP............................................................+76.4
°
C/W
28-Pin 5mm x 5mm Thin QFN....................................+48
°
C/W
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Junction-to-Case Thermal Resistance
28-Pin 5mm x 5mm Thin QFN......................................+2
°
C/W
Operating Temperature Range ...........................-40
°
C to +85
°
C
Junction Temperature......................................................+150
°
C
Storage Temperature Range.............................-65
°
C to +150
°
C
ESD Protection (Human Body Model)
(IN_ _,
IN_ _
, OUT_ _,
OUT_ _
, EN_ _, SEL_, LB_SEL_) ..±2kV
Soldering Temperature (10s)...........................................+300
°
C
DC ELECTRICAL CHARACTERISTICS
(V
CC
= +3.0V to +3.6V, R
L
= 100
±1%, EN_ _ = V
CC
, V
CM
= +0.05V to (V
CC
- 0.6V) (MAX9394), V
CM
= +0.06V to (V
CC
- 0.05V)
(MAX9395), T
A
= -40
°
C to +85
°
C, unless otherwise noted. Typical values are at V
CC
= +3.3V, |V
ID
| = 0.2V, V
CM
= +1.2V, T
A
= +25
°
C.)
(Notes 1, 2, and 3)
PARAMETER
SYM B O L
CONDITIONS
MIN
TYP
MAX
UNITS
LVCMOS/LVTTL INPUTS (EN_ _, BSEL, LB_SEL_)
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
DIFFERENTIAL INPUTS (IN_ _,
IN_ _
)
Differential Input Voltage
V
IH
V
IL
I
IH
I
IL
2.0
0
0
0
V
CC
0.8
20
10
V
V
V
IN
= +2.0V to V
CC
V
IN
= 0V to +0.8V
μA
μA
V
ID
V
ILD
0V and V
IHD
V
CC
, Figure 1
0.1
3.0
V
CC
-
0.6
V
CC
-
0.05
10
100
V
MAX9394
0.05
Input Common-Mode Range
V
CM
MAX9395
0.6
V
MAX9394
MAX9395
|V
ID
| 3.0V
|V
ID
| 3.0V
-75
-10
Input Current
I
IN_ _
,
I
IN_ _
μA
LVDS OUTPUTS (OUT_ _,
OUT_ _
)
Differential Output Voltage
V
OD
R
L
= 100
, Figure 2
250
350
450
mV
Change in Magnitude of V
OD
Between Complementary Output
States
V
OD
Figure 2
1.0
50
mV
Offset Common-Mode Voltage
V
OS
Figure 2
1.125
1.25
1.375
V
Change in Magnitude of V
OS
Between Complementary Output
States
V
OS
Figure 2
1.0
50
mV