
M
670MHz LVDS-to-LVDS and
Anything-to-LVDS 2:1 Multiplexers
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
V
CC
to GND...........................................................-0.3V to +4.0V
IN_+, IN_- to GND.................................................-0.3V to +4.0V
OUT+, OUT- to GND.............................................-0.3V to +4.0V
PD
, SEL to GND .........................................-1.4V to (V
CC
+ 1.4V)
Single-Ended and Differential Output
Short-Circuit Duration (OUT+, OUT-)......................Continuous
Continuous Power Dissipation (T
A
= +70
°
C)
10-Pin μMAX (derate 5.6mW/
°
C above +70
°
C)............444mW
10-Lead Thin QFN (derate 24.4mW/
°
C above +70
°
C)..1951mW
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 3.0V to 3.6V, R
L
= 100
,
PD
= high, SEL = high or low, differential input voltage
|
V
ID
|
= 0.05V to 1.2V, MAX9176 input com-
mon-mode voltage V
CM
= |V
ID
/2| to 2.4V - |V
ID
/2|, MAX9177 input common-mode voltage V
CM
= |V
ID
/2| to V
CC
- |V
ID
/2|, T
A
= -40
°
C to
+85
°
C, unless otherwise noted. Typical values are at V
CC
= 3.3V,
|
V
ID
|
= 0.2V, V
CM
= 1.25V, T
A
= +25
°
C.) (Notes 1, 2, 3)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Operating Temperature Range ...........................-40
°
C to +85
°
C
Maximum Junction Temperature .....................................+150
°
C
Storage Temperature Range.............................-65
°
C to +150
°
C
ESD Protection
Human Body Model (R
D
= 1.5k
, C
S
= 100pF)
(IN_+, IN_-, OUT+, OUT-)...............................................+16kV
IEC61000-4-2 Level 4 (R
D
= 330
, C
S
= 150pF)
Contact Discharge (IN_+, IN_-, OUT+, OUT-).................+8 kV
Air-Gap Discharge (IN_+, IN_-, OUT+, OUT-)................+15kV
Lead Temperature (soldering, 10s).................................+300
°
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DIFFERENTIAL INPUTS (IN_+, IN_-)
Differential Input High Threshold
Differential Input Low Threshold
Input Current
V
TH
V
TL
+50
mV
mV
μA
-50
-20
I
IN+,
I
IN-
Figure 1
+20
MAX9176
V
CC
= 0 or open,
Figure 1
Power-Off Input Current
I
INO+,
I
INO-
MAX9177
V
IN+
= 3.6V or 0,
V
IN-
= 3.6V or 0,
V
CC
= 0 or open,
Figure 1
-20
+20
μA
R
IN1
R
IN2
60
200
108
394
Fail-Safe Input Resistors
(MAX9176)
V
CC
= 3.6V, 0 or open,
Figure 1
k
Input Resistors
(MAX9177)
R
IN3
V
CC
= 3.6V, 0 or open,
Figure 1
212
450
k
Input Capacitance
LVTTL/LVCMOS INPUTS (SEL,
PD
)
Input High Voltage
Input Low Voltage
C
IN
IN_+ or IN_- to GND (Note 4)
4.5
pF
V
IH
V
IL
2.0
-1.0
-1.5
-20
V
CC
+ 1.0
+0.8
V
V
-1.0V
≤
SEL,
PD
≤
0V
0V
≤
SEL,
PD
≤
V
CC
V
CC
≤
SEL,
PD
≤
V
CC
+ 1.0V
mA
μA
mA
+20
+1.5
Input Current
I
IN
LVDS OUTPUT (OUT+, OUT-)
Differential Output Voltage
V
OD
Figure 2
250
393
475
mV
Change in Differential Output
Voltage Between Logic States
V
OD
Figure 2
1.0
15
mV
Offset Voltage
V
OS
Figure 3
1.125
1.25
1.375
V