
M
3.3V Single LVDS Driver/Receiver
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
V
CC
to GND...........................................................-0.3V to +4.0V
DO+, DO-, RI+, RI- to GND...................................-0.3V to +4.0V
DIN, ROUT, DE,
RE
to GND.......................-0.3V to (V
CC
+ 0.3V)
Driver Short-Circuit Current .......................................Continuous
Continuous Power Dissipation (T
A
= +70
°
C)
14-Pin SO (derate 8.3mW/
°
C above +70
°
C)................667mW
14-Pin TSSOP (derate 9.1mW/
°
C above +70
°
C) .........727mW
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 3.0V to 3.6V, |V
ID
| = 0.1V to 2.4V, common-mode input voltage (V
CM
) = |V
ID
/2| to 2.4V - |V
ID
|/2, R
L
= 100
±1%, T
A
= -40
°
C to
+85
°
C. Typical values are at V
CC
= 3.3V, |V
ID
| = 0.2V, V
CM
= 1.2V, T
A
= +25
°
C, unless otherwise noted.) (Notes 1, 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Operating Temperature Range ...........................-40
°
C to +85
°
C
Junction Temperature......................................................+150
°
C
Storage Temperature Range.............................-65
°
C to +150
°
C
ESD Protection
HBM (1.5k
, 100pF), DO+, DO-, RI+, RI-, DE,
RE
, DIN,
ROUT......................................................................> ±2kV
Lead Temperature (soldering, 10s).................................+300
°
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
SINGLE-ENDED INPUTS (DIN, DE,
RE
)
Input High Voltage
Input Low Voltage
Input Current
Input Diode Clamp Voltage
DRIVER OUTPUT (DO+, DO-)
Differential Output Voltage
V
IH
V
IL
I
IN
V
CL
2.0
0
-10
-1.5
V
CC
0.8
+10
V
V
μA
V
RE
, DE, DIN = high or low
I
CLAMP
= -18mA
V
OD
Figure 1
250
310
450
mV
Change in Magnitude of V
OD
Between
Complementary Output States
V
OD
Figure 1
0.02
25
mV
Offset Voltage
V
OS
Figure 1
1.0
1.29
1.7
V
Change in Magnitude of V
OS
Between
Complementary Output States
V
OS
Figure 1
0.8
25
mV
H g h- m p ed ance Leakag e C ur ent
Power-Off Leakage Current
I
OZD
I
OXD
DE = 0; DO+, DO- = V
CC
or 0
DO+, DO- = 3.6V or 0; V
CC
= 0
DO+ = 0 at DIN = V
CC
DO- = 0 at DIN = 0
-1
-1
+1
+1
-10
-10
μA
μA
-3
-3
Output Short-Circuit Current
I
OSD
mA
Output Capacitance
C
DO
Capacitance from DO+ or
DO- to 0
3.7
pF
RECEIVER INPUT (RI+, RI-)
Differential Input High Threshold
Differential Input Low Threshold
V
TH
V
TL
100
mV
mV
-100
Input Current
I
IN
V
CC
= 3.6V or 0;
RI+, RI- = 2.4V or 0
-10
+10
μA
Input Capacitance
RECEIVER OUTPUT (ROUT)
C
RI
RI+ or RI- to 0
5
pF
V
ID
= 100mV
RI+, RI- open
Output High Voltage
V
OH
I
OH
= -400μA
2.9
3.28
V
Output Low Voltage
Output Short-Circuit Current
V
OL
I
OS
I
OL
= +2.0mA, V
ID
= -100mV
V
ID
= +100mV, ROUT = 0
0.025
-28
0.4
-75
V
-20
mA