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參數(shù)資料
| 型號： | MAX9129EUE+T |
| 廠商： | Maxim Integrated Products |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC DRVR QUAD LVDS 16-TSSOP |
| 產(chǎn)品培訓(xùn)模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 類型： | 驅(qū)動器 |
| 驅(qū)動器/接收器數(shù)： | 4/0 |
| 規(guī)程： | LVDS |
| 電源電壓： | 3 V ~ 3.6 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-TSSOP（0.173"，4.40mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 16-TSSOP |
| 包裝： | 帶卷 (TR) |
MAX9129
Quad Bus LVDS Driver with
Flow-Through Pinout
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCC to GND ...........................................................-0.3V to +4.0V
IN_, EN, EN to GND....................................-0.3V to (VCC + 0.3V)
OUT_+, OUT_- to GND..........................................-0.3V to +4.0V
Short-Circuit Duration (OUT_+, OUT_-) .....................Continuous
Continuous Power Dissipation (TA = +70°C)
16-Pin QFN (derate 18.5mW/°C above +70°C) .........1481mW
16-Pin TSSOP (derate 9.4mW/°C above +70°C) .........755mW
Storage Temperature Range .............................-65°C to +150°C
Maximum Junction Temperature .....................................+150°C
Operating Temperature Range ...........................-40°C to +85°C
ESD Protection
Human Body Model, OUT_+, OUT_- ...............................±8kV
Lead Temperature (soldering, 10s) .................................+300°C
DC ELECTRICAL CHARACTERISTICS
(VCC = +3.0V to +3.6V, RL = 27
±1%, EN = high, EN = low, TA = -40°C to +85°C, unless otherwise noted. Typical values are at VCC
= +3.3V, TA = +25°C.) (Notes 1, 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
BLVDS OUTPUTS (OUT_+, OUT_-)
Differential Output Voltage
VOD
Figure 1
250
371
450
mV
Change in Magnitude of VOD
Between Complementary Output
States
VOD
Figure 1
1
25
mV
Offset Voltage
VOS
Figure 1
1.125
1.29
1.375
V
Change in Magnitude of VOS
Between Complementary Output
States
VOS
Figure 1
5
25
mV
Output High Voltage
VOH
1.465
1.6
V
Output Low Voltage
VOL
0.90
1.085
V
Differential Output Short-Circuit
Current
IOSD
VOD = 0
20
mA
Output Short-Circuit Current
IOS
OUT_+ = 0 at IN_ = VCC or
OUT_- = 0 at IN_ = 0
-20
mA
Output High-Impedance Current
IOZ
Disabled, OUT_+ = 0 or VCC, OUT_- = 0
or VCC
-1
1
A
Power-Off Output Current
IOFF
VCC = 0 or open, EN = EN = IN_ = 0,
OUT_+ = 0 or 3.6V, OUT_- = 0 or 3.6V
-1
1
A
Output Capacitance
COUT
Capacitance from OUT_+ or OUT_- to GND
4.3
pF
INPUTS (IN_, EN, EN)
High-Level Input Voltage
VIH
2.0
VCC
V
Low-Level Input Voltage
VIL
GND
0.8
V
Input Current
IIN
IN_, EN, EN = 0 or VCC
-15
15
A
SUPPLY CURRENT
Supply Current
ICC
RL = 27
, IN_ = VCC or 0 for all channels
58
70
mA
Disabled Supply Current
ICCZ
Disabled
3.2
5
mA
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