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參數(shù)資料
| 型號(hào)： | MAX8632ETI |
| 廠商： | Maxim Integrated Products, Inc. |
| 英文描述： | Quadruple 2-Input Positive-NAND Gates With Open-Drain Outputs 14-CDIP -55 to 125 |
| 中文描述： | 集成的DDR電源適用于臺(tái)式機(jī)，筆記本電腦解決方案和圖形卡 |
| 文件頁數(shù)： | 23/29頁 |
| 文件大小： | 512K |
| 代理商： | MAX8632ETI |
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and R5) used for setting the adjustable current limit as
shown in Figure 7.
The following is a procedure for calculating the value of
R4, R5, and R6:
1) Calculate the voltage, V
ILIM(NOM)
, required at ILIM
when the output voltage is at nominal:
2) Pick a percentage of foldback, PFB, from 15%
to 40%.
3) Calculate the voltage, V
ILIM(0V)
, when the output is
shorted (0V):
4) The value for R4 can be calculated as:
5) The parallel combination of R5 and R6, denoted
R56, is calculated as:
6) Then R6 can be calculated as:
7) Then R5 is calculated as:
Boost-Supply Diode and
Capacitor Selection (Buck)
A low-current Schottky diode, such as the CMDSH-3
from Central Semiconductor, works well for most appli-
cations. Do not use large-power diodes, because high-
er junction capacitance can charge up the voltage at
BST to the LX voltage and this exceeds the absolute
maximum rating of 6V. The boost capacitor should be
0.1μF to 4.7μF, depending on the input and output volt-
ages, external components, and PC board layout. The
boost capacitance should be as large as possible to
prevent it from charging to excessive voltage, but small
enough to adequately charge during the minimum low-
side MOSFET conduction time, which happens at maxi-
mum operating duty cycle (this occurs at minimum
input voltage). In addition, ensure that the boost capac-
itor does not discharge to below the minimum gate-to-
source voltage required to keep the high-side MOSFET
fully enhanced for lowest on-resistance. This minimum
gate-to-source voltage (V
GS(MIN)
) is determined by:
where V
DD
is 5V, Q
G
is the total gate charge of the
high-side MOSFET, and C
BOOST
is the boost-capacitor
value where C
BOOST
is C7 in the Typical Applications
Circuit (Figure 8).
V
V
x
Q
C
GS MIN
(
DD
G
BOOST
)
=
R
R
R
R
R
5
6
6
56
56
=
×
-
R
V
R
R
V
(
V
V
R
V
V
R
OUT
OUT
ILIM NOM
(
ILIM V
)
×
ILIM NOM
(
ILIM V
6
6
56
0
0
=
×
×
(
)
(
(
)
×
)
)
(
)
)
(
)
4
5
-
-
4-
R
V
μ
A
R
56
2
10
=
- 4
R
V
V
A
ILIM V
10
μ
4
2
0
=
(
)
-
V
P
V
ILIM V
FB
ILIM NOM
(
(
)
)
0
=
×
V
I
LIR
2
R
ILIM NOM
(
LOAD MAX
DS ON Q
(
)
(
)
)
×
=
×
×
10
1
2
-
M
Integrated DDR Power-Supply Solution for
Desktops, Notebooks, and Graphic Cards
______________________________________________________________________________________
23
Figure 7. Foldback Current Limit
MAX8632
REF
ILIM
GND
C
REF
R4
R6
R5
V
OUT
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MAX8632ETI+ | 功能描述:PMIC 解決方案 DDR Power-Supply Solution RoHS:否 制造商:Texas Instruments 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-24 封裝:Reel |
| MAX8632ETI+T | 功能描述:PMIC 解決方案 DDR Power-Supply Solution RoHS:否 制造商:Texas Instruments 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-24 封裝:Reel |
| MAX8632ETI+TGD2 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述: |
| MAX8632EVKIT | 功能描述:電源管理IC開發(fā)工具 RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評(píng)估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
| MAX8633ELA+ | 制造商:Maxim Integrated Products 功能描述: |
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