參數(shù)資料
型號(hào): MAX8515EVKIT
廠商: Maxim Integrated Products, Inc.
英文描述: Evaluation Kit for the MAX8515/MAX8515A
中文描述: MAX8515、MAX8515A評(píng)估板
文件頁(yè)數(shù): 2/14頁(yè)
文件大小: 296K
代理商: MAX8515EVKIT
M
PWM Buc k Converters with Bypass FET
for N-CDMA/W-CDMA Handsets
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
BATTP, BATT, OUT,
SHDN
,
SKIP
, HP,
REFIN, FB to GND....................................................-0.3V to +6V
PGND to GND .......................................................-0.3V to +0.3V
REF, COMP to GND ................................-0.3V to (V
BATT
+ 0.3V)
LX Current (Note 1).............................................................2.25A
Output Short-Circuit Duration........................................Indefinite
ELECTRICAL CHARACTERISTICS
(V
BATT
= V
BATTP
= 3.6V,
SHDN
=
SKIP
= BATT, V
REFIN
= 1.932V (MAX8500, MAX8502), V
REFIN
= 1.70V (MAX8501, MAX8503), C
REF
= 0.22μF, T
A
= -40
°
C to +85
°
C, unless otherwise noted. Typical values are at T
A
= +25
°
C.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Continuous Power Dissipation (T
A
= +70
°
C)
12-Lead Thin QFN (derate 16.9mW/
°
C above +70
°
C).1349mW
Operating Temperature Range ...........................-40
°
C to +85
°
C
J unction Temperature......................................................+150
°
C
Storage Temperature Range.............................-65
°
C to +150
°
C
Lead Temperature (soldering, 10s) .................................+300
°
C
PARAMETER
SYMBOL
V
BATT
V
UVLO
CONDITIONS
MIN
2.6
2.15
TYP
MAX
5.5
2.50
450
2200
UNITS
V
V
Input BATT Voltage
Undervoltage Lockout Threshold
V
BATT
rising, 1% hysteresis
SKIP
= GND
SKIP
= BATT, no switching
SKIP
= BATT, switching
2.35
280
450
3300
Quiescent Current
I
Q
μA
Quiescent Current in Dropout
V
REFIN
= 2.2V (MAX8500, MAX8503),
HP = BATT (MAX8504)
400
700
μA
Shutdown Supply Current
I
SHDN
SHDN
= GND, V
BATT
= V
BATTP
= 5.5V
V
REFIN
= 1.932V, load = 0 to 600mA
V
REFIN
= 0.227V
V
REFIN
= 1.700V, load = 0 to 600mA
V
REFIN
= 0.200V
0.1
3.40
0.40
3.40
0.40
-0.05
0.007
245
0.1
1.76
1.68
2
1.909
1.25
5
μA
3.33
0.35
3.33
0.35
3.47
0.45
3.47
0.45
OUT Voltage Accuracy
(MAX8500, MAX8502)
V
OUT
V
OUT Voltage Accuracy
(MAX8501, MAX8503)
V
OUT
V
OUT Voltage-Load Regulation
OUT Voltage-Line Regulation
OUT Input Resistance
REFIN Input Current
%/A
%/V
k
μA
MAX8500, MAX8503
100
-1
I
REF
+1
PWM buck
LDO linear regulator
PWM buck
LDO linear regulator
REFIN to OUT Gain
(MAX8500, MAX8502)
A
V
V/V
REFIN to OUT Gain
(MAX8501, MAX8503)
A
V
V/V
Reference Voltage
Reference Load Regulation
Reference UVLO
FB Voltage Accuracy (MAX8504)
FB Input Current (MAX8504)
V
REF
1.225
1.275
6.25
1.10
1.275
150
0.70
V
10μA < I
REF
< 100
μA
mV
V
V
nA
0.86
1.225
0.96
1.250
10
0.35
0.45
V
FB
I
FB
V
FB
= 1.3V
I
LX
= 180mA, V
BATT
= 3.6V
I
LX
= 180mA, V
BATT
= 2.6V
P-Channel On-Resistance
P
RDS
Note 1:
LX has internal clamp diodes to PGND and BATTP. Applications that forward bias these diodes should take care not to
exceed the IC
s package power dissipation limits.
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