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    參數(shù)資料
    型號: MAX8504
    廠商: Maxim Integrated Products, Inc.
    英文描述: PWM Buck Converters with Bypass FET for N-CDMA/W-CDMA Handsets
    中文描述: PWM buck轉(zhuǎn)換器,帶有旁路FET,適用于N-CDMA/W-CDMA手機(jī)
    文件頁數(shù): 2/14頁
    文件大?。?/td> 296K
    代理商: MAX8504
    M
    PWM Buc k Converters with Bypass FET
    for N-CDMA/W-CDMA Handsets
    2
    _______________________________________________________________________________________
    ABSOLUTE MAXIMUM RATINGS
    BATTP, BATT, OUT,
    SHDN
    ,
    SKIP
    , HP,
    REFIN, FB to GND....................................................-0.3V to +6V
    PGND to GND .......................................................-0.3V to +0.3V
    REF, COMP to GND ................................-0.3V to (V
    BATT
    + 0.3V)
    LX Current (Note 1).............................................................2.25A
    Output Short-Circuit Duration........................................Indefinite
    ELECTRICAL CHARACTERISTICS
    (V
    BATT
    = V
    BATTP
    = 3.6V,
    SHDN
    =
    SKIP
    = BATT, V
    REFIN
    = 1.932V (MAX8500, MAX8502), V
    REFIN
    = 1.70V (MAX8501, MAX8503), C
    REF
    = 0.22μF, T
    A
    = -40
    °
    C to +85
    °
    C, unless otherwise noted. Typical values are at T
    A
    = +25
    °
    C.) (Note 2)
    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
    operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
    absolute maximum rating conditions for extended periods may affect device reliability.
    Continuous Power Dissipation (T
    A
    = +70
    °
    C)
    12-Lead Thin QFN (derate 16.9mW/
    °
    C above +70
    °
    C).1349mW
    Operating Temperature Range ...........................-40
    °
    C to +85
    °
    C
    J unction Temperature......................................................+150
    °
    C
    Storage Temperature Range.............................-65
    °
    C to +150
    °
    C
    Lead Temperature (soldering, 10s) .................................+300
    °
    C
    PARAMETER
    SYMBOL
    V
    BATT
    V
    UVLO
    CONDITIONS
    MIN
    2.6
    2.15
    TYP
    MAX
    5.5
    2.50
    450
    2200
    UNITS
    V
    V
    Input BATT Voltage
    Undervoltage Lockout Threshold
    V
    BATT
    rising, 1% hysteresis
    SKIP
    = GND
    SKIP
    = BATT, no switching
    SKIP
    = BATT, switching
    2.35
    280
    450
    3300
    Quiescent Current
    I
    Q
    μA
    Quiescent Current in Dropout
    V
    REFIN
    = 2.2V (MAX8500, MAX8503),
    HP = BATT (MAX8504)
    400
    700
    μA
    Shutdown Supply Current
    I
    SHDN
    SHDN
    = GND, V
    BATT
    = V
    BATTP
    = 5.5V
    V
    REFIN
    = 1.932V, load = 0 to 600mA
    V
    REFIN
    = 0.227V
    V
    REFIN
    = 1.700V, load = 0 to 600mA
    V
    REFIN
    = 0.200V
    0.1
    3.40
    0.40
    3.40
    0.40
    -0.05
    0.007
    245
    0.1
    1.76
    1.68
    2
    1.909
    1.25
    5
    μA
    3.33
    0.35
    3.33
    0.35
    3.47
    0.45
    3.47
    0.45
    OUT Voltage Accuracy
    (MAX8500, MAX8502)
    V
    OUT
    V
    OUT Voltage Accuracy
    (MAX8501, MAX8503)
    V
    OUT
    V
    OUT Voltage-Load Regulation
    OUT Voltage-Line Regulation
    OUT Input Resistance
    REFIN Input Current
    %/A
    %/V
    k
    μA
    MAX8500, MAX8503
    100
    -1
    I
    REF
    +1
    PWM buck
    LDO linear regulator
    PWM buck
    LDO linear regulator
    REFIN to OUT Gain
    (MAX8500, MAX8502)
    A
    V
    V/V
    REFIN to OUT Gain
    (MAX8501, MAX8503)
    A
    V
    V/V
    Reference Voltage
    Reference Load Regulation
    Reference UVLO
    FB Voltage Accuracy (MAX8504)
    FB Input Current (MAX8504)
    V
    REF
    1.225
    1.275
    6.25
    1.10
    1.275
    150
    0.70
    V
    10μA < I
    REF
    < 100
    μA
    mV
    V
    V
    nA
    0.86
    1.225
    0.96
    1.250
    10
    0.35
    0.45
    V
    FB
    I
    FB
    V
    FB
    = 1.3V
    I
    LX
    = 180mA, V
    BATT
    = 3.6V
    I
    LX
    = 180mA, V
    BATT
    = 2.6V
    P-Channel On-Resistance
    P
    RDS
    Note 1:
    LX has internal clamp diodes to PGND and BATTP. Applications that forward bias these diodes should take care not to
    exceed the IC
    s package power dissipation limits.
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