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參數(shù)資料
| 型號： | MAX5435PEZT |
| 廠商： | Maxim Integrated Products, Inc. |
| 元件分類： | 通用總線功能 |
| 英文描述： | 256-Tap, Nonvolatile, I2C-Interface, Digital Potentiometers |
| 中文描述： | 四2輸入與門 |
| 文件頁數(shù)： | 3/17頁 |
| 文件大小： | 376K |
| 代理商： | MAX5435PEZT |
M
32-Tap, Nonvolatile, I
2
C, Linear, Digital
Potentiometers
_______________________________________________________________________________________
3
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= +2.7V to +5.25V, V
H
= V
DD
, V
L
= GND, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
DD
= +5V, T
A
=
+25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DYNAMIC CHARACTERISTICS
MAX5432/MAX5434
MAX5433/MAX5435
MAX5432/MAX5434
MAX5433/MAX5435
500
250
0.5
1.0
-3dB Bandwidth (Note 8)
kHz
Wiper Settling Time (Note 9)
μs
NONVOLATILE MEMORY RELIABILITY
Data Retention
T
A
= +85°C
T
A
= +25°C
T
A
= +85°C
50
Years
200,000
50,000
Endurance
Stores
POWER SUPPLY
Power-Supply Voltage
Standby Current
V
DD
I
DD
2.70
5.25
2
V
μA
Digital inputs = V
DD
or GND, T
A
= +25°C
During nonvolatile write; digital inputs =
V
DD
or GND (Note 10)
0.5
Programming Current
200
900
μA
Note 1:
All devices are production tested at T
A
= +25°C and are guaranteed by design and characterization for -40°C < T
A
< +85°C.
TIMING CHARACTERISTICS
(V
DD
= +2.7V to +5.25V, V
H
= V
DD
, V
L
= GND, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
DD
= +5V, T
A
=
+25°C.) (Figures 1 and 2) (Note 11)
PARAMETER
SYMBOL
f
SCL
t
SU-STA
t
HD-STA
t
HIGH
t
LOW
t
SU-DAT
t
HD-DAT
t
R
t
F
t
SU-STO
CONDITIONS
MIN
TYP
MAX
400
UNITS
kHz
μs
μs
μs
μs
ns
μs
ns
ns
μs
SCL Clock Frequency
Setup Time for START Condition
Hold Time for START Condition
CLK High Time
CLK Low Time
Data Setup Time
Data Hold Time
SDA, SCL Rise Time
SDA, SCL Fall Time
Setup Time for STOP Condition
0.6
0.6
0.6
1.3
100
0
0.9
300
300
0.6
Bus Free Time Between STOP
and START Condition
t
BUF
1.3
μs
Pulse Width of Spike Suppressed
t
SP
50
ns
Capacitive Load for Each Bus
Line
C
B
(Note 12)
400
pF
Nonvolatile Store Time
Idle time required after a nonvolatile
memory write (Note 13)
12
ms
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