參數(shù)資料
型號: MAX5057BASA
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 功率晶體管
英文描述: 4A, 20ns, Dual MOSFET Drivers
中文描述: 4 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8
封裝: 0.150 INCH, MS-012AA, SOIC-8
文件頁數(shù): 10/17頁
文件大?。?/td> 429K
代理商: MAX5057BASA
M
The logic inputs are high impedance and must not be left
floating. If the inputs are left open, OUT_ can go to an
undefined state as soon as V
DD
rises above the UVLO
threshold. Therefore, the PWM output from the controller
must assume proper state when powering up the device.
The MAX5054 has two logic inputs per driver providing
greater flexibility in controlling the MOSFET. Use IN_+ for
noninverting logic and IN_- for inverting logic operation.
Connect IN_+ to V
DD
and IN_- to GND if not used.
Alternatively, the unused input can be used as an
ON/OFF function. Use IN_+ for active-low shutdown logic
and IN_- for active-high shutdown logic (see Figure 4).
See Table 1 for all possible input combinations.
Driver Output
The MAX5054–MAX5057 have low R
DS(ON)
p-channel
and n-channel devices (totem pole) in the output stage
for the fast turn-on and turn-off high gate-charge switch-
ing MOSFETs. The peak source or sink current is typically
4A. The OUT_ voltage is approximately equal to V
DD
when in high state and is ground when in low state. The
driver R
DS(ON)
is lower at higher V
DD
, thus higher
source-/sink-current capability and faster switching
speeds. The propagation delays from the noninverting
and inverting logic inputs to outputs are matched to 2ns.
The break-before-make logic avoids any cross-conduc-
tion between the internal p- and n-channel devices, and
eliminates shoot-through currents reducing the quiescent
supply current.
Applications Information
RLC Series Circuit
The driver’s R
DS(ON)
(R
ON
), internal bond and lead
inductance (L
P
), trace inductance (L
S
), gate inductance
(L
G
), and gate capacitance (C
G
) form a series RLC
circuit with a second-order characteristic equation. The
series RLC circuit has an undamped natural frequency
(
0
) and a damping ratio (
ζ
) where:
The damping ratio needs to be greater than 0.5 (ideally 1)
to avoid ringing. Add a small resistor (R
GATE
) in series
with the gate when driving a very low gate-charge
MOSFET, or when the driver is placed away from the
MOSFET. Use the following equation to calculate the
series resistor:
L
P
can be approximated as 3nH and 2nH for SO and
TDFN packages, respectively. L
S
is on the order of
20nH/in. Verify L
G
with the MOSFET vendor.
R
L
(
L
C
L
R
GATE
P
S
G
G
ON
+
+
)
ξ
0
1
2
=
+
+
=
×
+
+
(
)
(
)
L
L
L
C
R
L
L
C
L
P
S
G
G
ON
P
S
G
G
4A, 20ns, Dual MOSFET Drivers
10
______________________________________________________________________________________
MAX5054A
V
DD
GND
INA-
INA+
OUTA
PWM
INPUT
ON
OFF
Figure 4. Unused Input as an ON/OFF Function (1/2 MAX5054A)
Table 1. MAX5054 Truth Table
INA+/INB+
Low
Low
High
High
INA-/INB-
Low
High
Low
High
OUTA/OUTB
Low
Low
High
Low
Table 2. MAX5055/MAX5056/MAX5057
Truth Table
NONINVERTING
IN_+
Low
High
OUT_
Low
High
INVERTING
IN_-
Low
High
OUT_
High
Low
相關PDF資料
PDF描述
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相關代理商/技術參數(shù)
參數(shù)描述
MAX5057BASA+ 功能描述:功率驅動器IC 4A 20ns Dual MOSFET Drivers RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
MAX5057BASA+T 功能描述:功率驅動器IC 4A 20ns Dual MOSFET Drivers RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
MAX5057BASA-T 功能描述:功率驅動器IC 4A 20ns Dual MOSFET Drivers RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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