
4A, 20ns, Dual MOSFET Drivers
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
(Voltages referenced to GND.)
V
DD
...............................................................................-0.3V to +18V
INA+, INA-, INB+, INB- ...............................................-0.3V to +18V
OUTA, OUTB...................................................-0.3V to (V
DD
+ 0.3V)
OUTA, OUTB Short-Circuit Duration........................................10ms
Continuous Source/Sink Current at OUT_ (P
D
< P
DMAX
).....200mA
Continuous Power Dissipation (T
A
= +70°C)
8-Pin TDFN-EP (derate 24.4mW/°C above +70°C)........1951mW
Junction-to-Case Thermal Resistance (
θ
JC
) ......................2°C/W
ELECTRICAL CHARACTERISTICS
(V
DD
= 4V to 15V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
= 15V and T
A
= +25
°
C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
8-Pin SO-EP (derate 19.2mW/°C above +70°C)…........1538mW
Junction-to-Case Thermal Resistance (
θ
JC
) ......................6°C/W
8-Pin SO (derate 5.9mW/°C above +70°C)…..................471mW
Junction-to-Case Thermal Resistance (
θ
JC
)....................40°C/W
Operating Temperature Range..............................-40°C to +125°C
Storage Temperature Range .................................-65°C to +150°C
Junction Temperature...........................................................+150°C
Lead Temperature (soldering, 10s)......................................+300°C
M
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLY
V
DD
Operating Range
V
DD
Undervoltage Lockout
V
DD
Undervoltage Lockout
Hysteresis
V
DD
UVLO
4
15
3.85
V
V
V
DD
rising
3.00
3.50
200
mV
V
DD
Undervoltage Lockout to
Output Delay
V
DD
rising
12
μs
V
DD
= 4V
28
55
I
DD
INA- = INB- = V
DD
,
INA+ = INB+ = 0V
(not switching)
V
DD
= 15V
40
75
μA
V
DD
Supply Current
I
DD-SW
INA- = 0V, INB+ = V
DD
= 15V,
INA+ = INB- both channels switching at
250kHz, C
L
= 0
1
2.4
4
mA
DRIVER OUTPUT (SINK)
T
A
= +25°C
T
A
= +125°C
T
A
= +25°C
T
A
= +125°C
1.1
1.5
2.2
3.0
4
1.8
2.4
3.3
4.5
V
DD
= 15V,
I
OUT_
= -100mA
Driver Output Resistance Pulling
Down
R
ON-N
V
DD
= 4.5V,
I
OUT_
= -100mA
V
DD
= 15V, C
L
= 10,000pF
Peak Output Current (Sinking)
I
PK-N
A
V
DD
= 4.5V
V
DD
= 15V
0.45
0.24
Output-Voltage Low
I
OUT_
= -100mA
V
Latchup Protection
DRIVER OUTPUT (SOURCE)
I
LUP
Reverse current I
OUT_
(Note 2)
400
mA
T
A
= +25°C
T
A
= +125°C
T
A
= +25°C
T
A
= +125°C
1.5
1.9
2.75
3.75
4
2.1
2.75
4
5.5
V
DD
= 15V,
I
OUT_
= 100mA
Driver Output Resistance Pulling
Up
R
ON-P
V
DD
= 4.5V,
I
OUT_
= 100mA
V
DD
= 15V, C
L
= 10,000pF
Peak Output Current (Sourcing)
I
PK-P
A