(VIN = +19V, T
參數(shù)資料
型號(hào): MAX4960ELB+T
廠商: Maxim Integrated Products
文件頁(yè)數(shù): 11/17頁(yè)
文件大?。?/td> 0K
描述: IC CTLR HI VOLTAGE OVP 10-UDFN
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 2,500
類型: 過(guò)壓保護(hù)控制器
應(yīng)用: PC,PDA
安裝類型: 表面貼裝
封裝/外殼: 10-WFDFN
供應(yīng)商設(shè)備封裝: 10-uDFN(2x2)
包裝: 帶卷 (TR)
MAX4959/MAX4960
ELECTRICAL CHARACTERISTICS (continued)
(VIN = +19V, TA = -40°C to +85°C, unless otherwise noted, CVDD = 100nF. Typical values are at TA = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
GATE1 Leakage Current
G1ILKG
VOVS > OVREF, VUVS < UVREF, or VCB = +5V
-1
+1
A
GATE2 Leakage Current
G2ILKG
VCB = 0V
-1
+1
A
CB
Logic-Level High
VIH
1.5
V
Logic-Level Low
VIL
0.4
V
CB Pulldown Resistor
RCBPD
123
M
Ω
TIMING
Debounce Time
tDEB
VOVP > VIN > VUVP for greater than tDEB for
GATE1 to go low
10
25
40
ms
GATE1 Assertion Delay from
CB Pin
t1GATE
CB = +3V to 0
rise time = fall time = 5ns (Note 3)
50
ns
GATE2 Assertion Delay from
CB Pin
t2GATE
CB = 0 to +3V
rise time = fall time = 5ns (Note 3)
50
ns
Blanking Time
tBLANK
10
25
40
ms
MAX4960
SOURCE1/GATE1 Resistance
RSG
(MAX4960)
140
200
260
k
Ω
GATE1/Ground Resistance
RGG
GATE1 Asserted (MAX4960)
140
200
260
k
Ω
Note 1: Operation is tested at TA= +25°C and guaranteed by design for DFN package. Operation over specified temperature range
is tested for MAX package.
Note 2: Do not exceed absolute maximum rating; the ratio between the externally set OVLO and UVLO threshold must not exceed 4,
[OVLO/UVLO]MAX ≤ 4.
Note 3: Assertion delay starts from switching of CB pin to reaching of 80% of GATE1/GATE2 transition. This delay is measured without
external capacitive load.
High-Voltage OVP with Battery Switchover
_______________________________________________________________________________________
3
POWER-UP RESPONSE
(RPULLUP = 1k
Ω)
MAX4959/60
toc01
TIME (
μs)
VOLTAGE
(V)
100
50
0
-50
-100
0
2
4
6
8
10
12
-2
-150
150
VIN
VDD
VGATE1
OVERVOLTAGE RESPONSE
(RPULLUP = 5k
Ω)
MAX4959/60
toc02
TIME (
μs)
VOLTAGE
(V)
100
50
0
-50
-100
5
10
15
20
25
30
0
-150
150
VIN
VDD
VGATE1
UNDERVOLTAGE RESPONSE
(WITHIN BLANKING TIME)
(RPULLUP = 1k
Ω)
MAX4959/60
toc03
TIME (
μs)
VOLTAGE
(V)
60
50
10
20
30
40
2
4
6
8
10
12
14
16
0
070
DRAIN OF P1
VIN
VGATE1
Typical Operating Characteristics
(VOVLO = 22.2V and VUVLO = 10.1V, R1 = 887kΩ, R2 = 66.5kΩ, R3 = 54.9kΩ, all resistors 1%, OVREF = UVREF = 1.228V.)
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