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參數(shù)資料
型號(hào)： MAX44269EWL+T
廠商： Maxim Integrated Products
文件頁(yè)數(shù)： 7/14頁(yè)
文件大小： 0K
描述： IC COMPARATOR DUAL LP 9WLP
產(chǎn)品培訓(xùn)模塊： Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝： 1
類型： 通用
元件數(shù)： 2
輸出類型： 開路漏極
電壓 - 電源，單路/雙路(±)： 1.8 V ~ 5.5 V
電流 - 靜態(tài)（最大值）： 1µA
磁滯： 6mV
封裝/外殼： 9-WFBGA，WLBGA
安裝類型： 表面貼裝
包裝： 標(biāo)準(zhǔn)包裝
其它名稱： MAX44269EWL+TDKR
Maxim Integrated Products 2
MAX44269
1.3mm x 1.3mm, Low-Power
Dual Comparator
VCC to GND.............................................................-0.3V to +6V
INA+, INA-, INB+, INB- to GND..............................-0.3V to +6V
Continuous Input Current into Any Pin............................ Q20mA
Maximum Power Dissipation
(derate 11.9mW/NC at TA = +70NC) ............................952mW
Output Voltage to GND (OUT_) ..............................-0.3V to +6V
Output Current (OUT_).................................................... Q50mA
Output Short-Circuit Duration (OUT_) .......................Continuous
Operating Temperature Range.......................... -40NC to +85NC
Storage Temperature Range............................ -65NC to +150NC
Junction Temperature .....................................................+150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
WLP
Junction-to-Ambient Thermal Resistance (
qJA) ..........84°C/W
ABSOLUTE MAXIMUM RATINGS
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
ELECTRICAL CHARACTERISTICS
(VCC = 5V, VGND = 0V, VIN- = VIN+ = 1.2V, RPULLUP = 100kI to VCC, TA = -40NC to +85NC. Typical values are at TA = +25NC, unless
otherwise noted.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS
Input-Referred Hysteresis
VHYS
(VGND - 0.2V) P VCM P (VCC + 0.2V) (Note 3)
4
6
mV
Input Offset Voltage
VOS
VGND - 0.2V P VCM P
VCC + 0.2V (Note 4)
TA = +25NC
0.15
5
mV
-40NC P TA P +85NC
10
Input Bias Current
IB
TA = +25NC
0.15
nA
TA = -40NC to +85NC
0.2
Output-Voltage Swing Low
VOL
VCC = 1.8V,
ISINK = 1mA
TA = +25NC
105
200
mV
-40NC P TA P +85NC
300
VCC = 5V, ISINK = 6mA
TA = +25NC
285
350
-40NC P TA P +85NC
450
Input Voltage Range
VCM
Inferred from VOS test
VGND
- 0.2V
VCC
+ 0.2V
V
Output Short-Circuit
Current
ISC
Sinking, VOUT = VCC
VCC = 1.8V
3
mA
VCC = 5V
30
Output Leakage Current
ILEAK
VCC = 5.5V, VOUT = 5.5V
0.2
nA
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