參數(shù)資料
型號(hào)： MAX4409ETP+T
廠商： Maxim Integrated Products
文件頁(yè)數(shù)： 12/20頁(yè)
文件大?。?/td> 0K
描述： IC AMP AUDIO .08W STER AB 20TQFN
產(chǎn)品培訓(xùn)模塊： Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝： 2,500
系列： DirectDrive®
類(lèi)型： AB 類(lèi)
輸出類(lèi)型： 耳機(jī)，2-通道（立體聲）
在某負(fù)載時(shí)最大輸出功率 x 通道數(shù)量： 80mW x 2 @ 16 歐姆
電源電壓： 1.8 V ~ 3.6 V
特點(diǎn)： 消除爆音，短路保護(hù)和熱保護(hù)，關(guān)閉
安裝類(lèi)型： 表面貼裝
供應(yīng)商設(shè)備封裝： 20-TQFN-EP（4x4）
封裝/外殼： 20-WFQFN 裸露焊盤(pán)
包裝： 帶卷 (TR)
MAX4409
80mW, DirectDrive, Stereo Headphone
Amplifier with Common-Mode Sense
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VPVDD = VSVDD = 3V, VPGND = VSGND = 0, SHDN = SVDD, C1 = C2 = 2.2F, RIN = RF = R1 = R2 = 10k
Ω, RL = ∞, TA = TMIN to
TMAX, unless otherwise noted. Typical values are at TA = +25°C.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
PGND to SGND .....................................................-0.3V to +0.3V
PVDD to SVDD .................................................................-0.3V to +0.3V
PVSS to SVSS .........................................................-0.3V to +0.3V
PVDD and SVDD to PGND or SGND .........................-0.3V to +4V
PVSS and SVSS to PGND or SGND ..........................-4V to +0.3V
IN_ and COM to SGND.................................SVSS to (SVDD - 1V)
IN_ to COM .....................................(COM + 2V) to (COM - 0.3V)
SHDN_ to SGND........................(SGND - 0.3V) to (SVDD + 0.3V)
OUT_ to SGND ............................(SVSS - 0.3V) to (SVDD + 0.3V)
C1P to PGND.............................(PGND - 0.3V) to (PVDD + 0.3V)
C1N to PGND .............................(PVSS - 0.3V) to (PGND + 0.3V)
Output Short Circuit to GND or VDD...........................Continuous
Thermal Limits (Note 1)
Continuous Power Dissipation (TA = +70°C)
20-Pin Thin QFN Multilayer (derate 25.6mW/°C
above +70°C)..........................................................2051mW
θJA................................................................................39°C/W
θJC...............................................................................5.7°C/W
Junction Temperature ......................................................+150°C
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage Range
VDD
Guaranteed by PSRR test
1.8
3.6
V
Quiescent Supply Current
IDD
5
8.4
mA
Shutdown Supply Current
ISHDN
SHDN = GND
6
10
A
VIH
0.7 x
SVDD
SHDN Thresholds
VIL
0.3 x
SVDD
V
SHDN Input Leakage Current
-1
+1
A
SHDN to Full Operation
tSON
175
s
CHARGE PUMP
Oscillator Frequency
fOSC
272
320
368
kHz
AMPLIFIERS
Input Offset Voltage
VOS
RL = 32
Ω
0.5
2.4
mV
Input Bias Current
IBIAS
-700
-100
0
nA
COM Bias Current
ICOM
-1400
-200
0
nA
Equivalent Input Offset Current
IOS
IOS = (IBIAS(INR) + IBIAS(INL) - ICOM) / 2
±2
nA
COM Input Range
VCOM
Inferred from CMRR test
-500
+500
mV
Common-Mode Rejection Ratio
CMRR
-500mV
≤ VCOM ≤ +500mV, RSOURCE ≤ 10Ω
75
96
dB
1.8V
≤ VDD ≤ 3.6V
DC (Note 3)
75
86
fRIPPLE = 1kHz
76
Power-Supply Rejection Ratio
PSRR
VDD = 3.0V,
200mVP-P ripple (Note 4)
fRIPPLE = 20kHz
48
dB
RL = 32
Ω
65
Output Power
POUT
THD+N = 1%, TA = +25°C
RL = 16
Ω
55
80
mW
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a 4-layer
board. For detailed information on package thermal considerations see www.maxim-ic.com/thermal-tutorial.
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