
M
950MHz FET-Input Buffer with 75
Output
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
Input Voltage.......................................................................±2.5V
V
CC
Supply Voltage............................................................+5.5V
Output-Stage Supply .........................................................+5.5V
V
EE
Supply Voltage..............................................................-5.5V
Peaking Pad Voltage.............................................................0.0V
ELECTRICAL CHARACTERISTICS
(V
CC
= 4.75V to 5.25V, V
EE
= -4.75V to -5.25V, T
A
= +25°C, stated performance characterized for T
A
= 0°C to +70°C, unless
otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Ground Voltage.....................................................................0.0V
Continuous Power Dissipation (T
A
= +70°C)...................471mW
Operating Temperature Range...............................0°C to +70°C
Lead Temperature (soldering, 10sec) .............................+300°C
V
IN
= 0V, R
L
= 75
V
IN
= 0V, R
L
= 75
R
L
= 75
, gain = 0.5
V
IN
= 0V, R
L
= 75
V
IN
= 0V, R
L
= 75
R
L
= 75
, gain = 0.5
V
IN
= 0V, R
L
= 75
V
IN
= 0V, R
L
= 75
R
L
= 75
, measured over input
dynamic range
R
L
= 75
V
IN
= 0V
CONDITIONS
dB
40
60
-5V V
EE
Power-Supply Rejection Ratio
TYPICAL OPERATING PERFORMANCE
(V
CC
= 5.0V, V
EE
= -5.0V, R
L
= 75
, T
A
= +25°C, unless otherwise noted.)
dB
50
75
+5V Output Stage Power-Supply
Rejection Ratio
dB
40
55
+5V V
CC
Power-Supply Rejection Ratio
mA
mA
mV
nA
9
11
24
14
31
3
76.5
1
I
VCC2
I
VEE
+5V Output Stage Quiescent Current
-5V V
EE
Current
Output Offset Voltage
Output Resistance
Input Current
mA
9
14
19
I
VCC1
+5V V
CC
Current
V
-1.3
1.6
Input Dynamic Range
%
0.50
1
Linearity
0.49
0.50
0.51
Gain
17
-3
74.0
-1
75.0
0.01
R
OUT
I
B
UNITS
MIN
TYP
MAX
SYMBOL
PARAMETER
-3dB
-6dB
MHz
950
2000
BW
Bandwidth
pF
ns
ps
dB
MHz
MHz
V/μs
ns
dBc
dBc
dBm
%
degrees
2.2
2
350
±0.01
60
80
1000
5
-50
< -60
28
0.11
0.03
C
IN
t
SET
Input Capacitance
Settling Time to 0.1%
Rise/Fall Times
Gain Flatness
Gain Flatness ±0.1dB
Gain Flatness ±0.2dB
Slew Rate
Overdrive Recovery Time
2nd Harmonic Distortion
3rd Harmonic Distortion
3rd-Order Intercept
Differential Gain Error
Differential Phase Error
V
IN
= 0.25V step, V
OUT
= 0.125V step
V
IN
= 0.25V step with < 30ps rise time
At 30MHz
t
RISE
/t
FALL
GF
GF1
GF2
SR
t
OD
2HD
3HD
TOI
DG
DP
V
IN
= 2.5V step with 200ps rise time
V
IN
= 2.5V step
At 50MHz
At 50MHz
At 100MHz
At 3.58MHz
At 3.58MHz