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參數(shù)資料
| 型號： | MAX31826MUA+T |
| 廠商： | Maxim Integrated |
| 文件頁數(shù)： | 3/22頁 |
| 文件大?。?/td> | 1648K |
| 描述： | IC TEMP SENSOR DIGITAL 8UMAX |
| 標準包裝： | 2,500 |
| 系列： | 1-Wire® |
| 功能： | 溫度監(jiān)控系統(tǒng)（傳感器） |
| 傳感器類型： | 內(nèi)部 |
| 感應(yīng)溫度： | -55°C ~ 125°C |
| 精確度： | ±2°C |
| 拓撲： | 寄存器庫，變簽式暫存器 |
| 輸出類型： | 1-Wire? |
| 輸出警報： | 無 |
| 輸出風(fēng)扇： | 無 |
| 電源電壓： | 3 V ~ 3.7 V |
| 工作溫度： | -55°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-TSSOP，8-MSOP（0.118"，3.00mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-uMAX |
| 包裝： | 帶卷 (TR) |
? Maxim Integrated Products 3
MAX31826
1-Wire Digital Temperature Sensor
with 1Kb Lockable EEPROM
Note 1: Limits are 100% production tested at T
A
= +25癈 and/or T
A
= +85癈. Limits over the operating temperature range and
relevant supply voltage range are guaranteed by design and characterization. Typical values are not guaranteed.
Note 2: All voltages are referenced to ground.
Note 3: The pullup supply voltage specification assumes that the pullup device is ideal, and therefore the high level of the pullup
is equal to V
PU
. To meet the devices V
IH
specification, the actual supply rail for the strong pullup transistor must include
margin for the voltage drop across the transistor when it is turned on; thus: V
PU_ACTUAL
= V
PU_IDEAL
+ V
TRANSISTOR
.
Note 4: Guaranteed by design. These limits represent a three sigma distribution.
Note 5: To guarantee a presence pulse under low-voltage parasite-power conditions, V
ILMAX
might need to be reduced to as low
as 0.5V.
Note 6: Logic-high voltages are specified at a 1mA source current.
Note 7: Standby current specified up to T
A
= +70NC. Standby current typically is 3FA at T
A
= +125NC.
Note 8: To minimize I
DDS
, DQ should be within the following ranges: V
GND
P V
DQ
P V
GND
+ 0.3V or V
DD
- 0.3V P V
DQ
P V
DD
.
Note 9: Active current refers to supply current during active temperature conversions or EEPROM writes.
Note 10: DQ line is high (high-impedance state).
Note 11: See the 1-Wire Timing Diagrams.
Note 12: Under parasite power, if t
RSTL
> 960Fs, a power-on reset (POR) can occur.
AC ELECTRICAL CHARACTERISTICS
(V
DD
= 3.0V to 3.7V, T
A
= -55癈 to +125癈, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Temperature Conversion Time
t
CONV
12-bit resolution
150
ms
Time to Strong Pullup On
t
SPON
Start Convert T command, or Copy
Scratchpad 2 command issued
10
Fs
Time Slot
t
SLOT
(Note 11)
60
120
Fs
Recovery Time
t
REC
(Note 11)
1
Fs
Write-Zero Low Time
t
LOW0
(Note 11)
60
120
Fs
Write-One Low Time
t
LOW1
(Note 11)
1
15
Fs
Read Data Valid
t
RDV
(Note 11)
15
Fs
Reset Time High
t
RSTH
(Note 11)
480
Fs
Reset Time Low
t
RSTL
(Notes 11, 12)
480
Fs
Presence-Detect High
t
PDHIGH
(Note 11)
15
60
Fs
Presence-Detect Low
t
PDLOW
(Note 11)
60
240
Fs
DQ Capacitance
C
IN/OUT
25
pF
AD0AD3 Capacitance
C
IN_AD
50
pF
NONVOLATILE MEMORY
EEPROM Write/Erase Cycles
N
EEWR
At T
A
= +25癈
200k
At T
A
= +85癈 (worst case)
50k
EEPROM Data Retention
t
EEDR
At T
A
= +85癈 (worst case)
40
Years
EEPROM Write Time
t
WR
20
25
ms
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