參數(shù)資料
型號(hào): MAX11100EWC+T
廠商: Maxim Integrated Products
文件頁(yè)數(shù): 12/19頁(yè)
文件大?。?/td> 0K
描述: IC ADC 16BIT SRL 200KSPS 12WLP
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 1
位數(shù): 16
采樣率(每秒): 200k
數(shù)據(jù)接口: MICROWIRE?,QSPI?,串行,SPI?
轉(zhuǎn)換器數(shù)目: 1
功率耗散(最大): 1.3W
電壓電源: 模擬和數(shù)字
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 12-WFBGA,WLCSP
供應(yīng)商設(shè)備封裝: 12-WLP
包裝: 標(biāo)準(zhǔn)包裝
輸入數(shù)目和類型: 1 個(gè)單端,單極
其它名稱: MAX11100EWC+TDKR
Maxim Integrated Products 2
MAX11100
16-Bit, +5V, 200ksps ADC with 10A Shutdown
AVDD to AGND .......................................................-0.3V to +6V
DVDD to DGND.......................................................-0.3V to +6V
DGND to AGND ...................................................-0.3V to +0.3V
AIN, REF to AGND ............................... -0.3V to (VAVDD + 0.3V)
SCLK, CS to DGND.................................................-0.3V to +6V
DOUT to DGND.................................... -0.3V to (VDVDD + 0.3V)
Maximum Current Into Any Pin ....................................... Q50mA
Continuous Power Dissipation (TA = +70NC)
F
MAX (derate 5.6mW/NC above +70NC) .....................444mW
WLP (derate 16.1mW/NC above +70NC)......1300mW (Note 1)
Operating Temperature Range.......................... -40NC to +85NC
Maximum Junction Temperature.....................................+150NC
Storage Temperature Range............................ -65NC to +150NC
Lead Temperature (FMAX only; soldering, 10s).............+300NC
Soldering Temperature (reflow) ......................................+260NC
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VAVDD = VDVDD = 4.75V to 5.25V, fSCLK = 4.8MHz (50% duty cycle), 24 clocks/conversion (200ksps), VREF = 4.096V, CREF = 4.7FF,
TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25NC.)
Note 1: All WLP devices are 100% production tested at TA = +25NC. Specifications over temperature limits are guaranteed by
design and characterization.
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DC ACCURACY (Note 2)
Resolution
16
Bits
Relative Accuracy
INL
(Note 3)
-2
+2
LSB
Differential Nonlinearity
DNL
-1
+2
LSB
Transition Noise
RMS noise
Q
0.65
LSBRMS
Offset Error
0.1
1
mV
Gain Error
(Note 4)
Q
0.002
Q
0.01
%FSR
Offset Drift
0.4
ppm/°C
Gain Drift
(Note 4)
0.2
ppm/°C
DYNAMIC SPECIFICATIONS (1kHz sine wave, 4.096VP-P) (Note 2)
Signal-to-Noise Plus Distortion
SINAD
86
91.5
dB
Signal-to-Noise Ratio
SNR
87
91.7
dB
Total Harmonic Distortion
THD
-106
-90
dB
Spurious-Free Dynamic Range
SFDR
92
108
dB
Full-Power Bandwidth
-3dB point
4
MHz
Full-Linear Bandwidth
SINAD > 86dB
10
kHz
CONVERSION RATE
Conversion Time
tCONV
(Note 5)
5
240
F
s
Serial Clock Frequency
fSCLK
0.1
4.8
MHz
Aperture Delay
tAD
15
ns
Aperture Jitter
tAJ
< 50
ps
Sample Rate
fS
fSCLK/24
200
ksps
Track/Hold Acquisition Time
tACQ
1.1
F
s
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