參數(shù)資料
型號(hào)： MAPRST0912-50
元件分類： 功率晶體管
英文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
封裝： ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 150K
代理商： MAPRST0912-50
Avionics Pulsed Power Transistor
50W, 960-1215 MHz, 10s Pulse, 10% Duty
MAPRST0912-50
M/A-COM Products
Released, 05 Sep 07
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Features
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS Compliant
Outline Drawing
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Frequency
Symbol
Min
Max
Units
Collector-Emitter Breakdown Voltage IC = 15mA
BVCES
65
-
V
Collector-Emitter Leakage Current
VCE = 40V
ICES
-
2.0
mA
Thermal Resistance
Vcc = 50V, Pin = 6.2W
F = 960, 1090, 1215 MHz
RTH(JC)
-
0.80
°C/W
Output Power
Vcc = 50V, Pin = 6.2W
F = 960, 1090, 1215 MHz
PO
50
-
W
Power Gain
Vcc = 50V, Pin = 6.2W
F = 960, 1090, 1215 MHz
GP
9.1
-
dB
Collector Efficiency
Vcc = 50V, Pin = 6.2W
F = 960, 1090, 1215 MHz
η
C
40
-
%
Input Return Loss
Vcc = 50V, Pin = 6.2W
F = 960, 1090, 1215 MHz
RL
-
-9
dB
Load Mismatch Stability
Vcc = 50V, Pin = 6.2W
F = 960 MHz
VSWR-T
-
10:1
-
Load Mismatch Tolerance
Vcc = 50V, Pin = 6.2W
F = 960, 1090, 1215 MHz
VSWR-S
-
1.5:1
-
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
VCES
65
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current (Peak)
IC
5.3
A
Power Dissipation @ +25°C
PTOT
220
kW
Storage Temperature
TSTG
-65 to +200
°C
Junction Temperature
TJ
200
°C
相關(guān)PDF資料
PDF描述
MAT-01GH/883 25 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78
MAT03-903H SMALL SIGNAL TRANSISTOR
MAT03-913L SMALL SIGNAL TRANSISTOR
MAT03-913H SMALL SIGNAL TRANSISTOR
MAT03-903L SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MAPRST1030-1KS 功能描述:射頻MOSFET電源晶體管 1030MHz 1000W Gain: 8.0dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MAPRST1214-030UF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RADAR PULSED POWER TRANSISTOR
MAPRST1214-150UF 功能描述:射頻MOSFET電源晶體管 1.2-1.4GHz 150W Gain: 7.4dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MAPRST1214-150UF_07 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Radar Pulsed Power Transistor 150W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty
MAPRST1214-30UF 功能描述:射頻MOSFET電源晶體管 1.2-1.4GHz 30W Gain:7.5dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*