參數(shù)資料
型號(hào)： MAPLST2122-090WF
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù)： 1/5頁
文件大?。?/td> 233K
代理商： MAPLST2122-090WF
RF Power Field Effect Transistor
LDMOS, 2110 — 2170 MHz, 90W, 28V
Designed for W-CDMA base station
applications in the 2.1 to 2.2 GHz
Frequency Band. Suitable for TDMA,
CDMA, W-CDMA and multicarrier power
amplifier applications.
90W Output Power at P1dB (CW)
11dB Minimum Gain at P1dB (CW)
W-CDMA Typical Performance:
(28VDC, -45dB ACPR @ 4.096MHz)
Output Power: 12W (typ.)
Gain: 12dB (typ.)
Efficiency: 16% (typ.)
10:1 VSWR Ruggedness (CW @ 60W,
28V, 2110MHz)
MAPLST2122-090WF
Package Style
2/18/2003
Preliminary
Maximum Ratings
Parameter
Symbol
Rating
Units
Drain—Source Voltage
VDSS
65
Vdc
Gate—Source Voltage
VGS
20
Vdc
Drain Current — Continuous
ID
20
Adc
Total Power Dissipation @ TC = 25 °C
PD
206
W
Storage Temperature
TSTG
-40 to +150
°C
Junction Temperature
TJ
+200
°C
Characteristic
Symbol
Thermal Resistance, Junction to Case
RΘJC
Max
0.85
Unit
C/W
Thermal Characteristics
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.
Features
MAPLST2122-090WF
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MAPM-020512-010C00 功能描述:射頻MOSFET電源晶體管 20-512MHz Gain:25dB VSWR:3:1 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MAPM-020512-010C00_2 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:MAPM-020512-010C00
MAPM-020512-040C00 功能描述:射頻MOSFET電源晶體管 20-512MHz Gain:40dB VSWR:3:5 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MAPM-020512-040C00_2 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Broadband UHF/VHF Power Module
MAPM-030400-010C00 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Broadband Power Module
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