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參數(shù)資料
| 型號(hào)： | MAC9N |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | TRIACS 8.0 AMPERES RMS 400 thru 800 VOLTS |
| 中文描述： | 800 V, 8 A, TRIAC, TO-220AB |
| 封裝： | CASE 221A, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 78K |
| 代理商： | MAC9N |
3–49
Motorola Thyristor Device Data
Designed for high performance full-wave ac control applications where high
noise immunity and high commutating di/dt are required.
Blocking Voltage to 800 Volts
On-State Current Rating of 8.0 Amperes RMS at 100
°
C
Uniform Gate Trigger Currents in Three Modes
High Immunity to dv/dt — 500 V/
μ
s minimum at 125
°
C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating di/dt — 6.5 A/ms minimum at 125
°
C
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDRM
Peak Repetitive Off-State Voltage (1)
(–40 to 125
°
C, Sine Wave, 50 to 60 Hz, Gate Open)
MAC9D
MAC9M
MAC9N
400
600
800
Volts
IT(RMS)
On-State RMS Current
(60 Hz, TC = 100
°
C)
8.0
A
ITSM
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125
°
C)
80
A
I2t
Circuit Fusing Consideration (t = 8.3 ms)
26
A2sec
PGM
PG(AV)
TJ
Tstg
Peak Gate Power (Pulse Width
≤
1.0
μ
s, TC = 80
°
C)
Average Gate Power (t = 8.3 ms, TC = 80
°
C)
Operating Junction Temperature Range
16
Watts
0.35
Watts
–40 to +125
°
C
Storage Temperature Range
–40 to +150
°
C
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
2.2
62.5
°
C/W
TL
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
260
°
C
(1)
VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
CASE 221A-06
(TO-220AB)
Style 4
MT2
MT1
MT2
TRIACS
8.0 AMPERES RMS
400 thru 800
VOLTS
*Motorola preferred devices
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