參數(shù)資料
型號(hào)： MAC97A8-T92-B
廠商： UNISONIC TECHNOLOGIES CO LTD
元件分類： 晶閘管
英文描述： LOGIC LEVEL TRIAC
中文描述： 600 V, 0.6 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92
封裝： TO-92, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 138K
代理商： MAC97A8-T92-B
MAC97A6/8
TRIACS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R401-023,C
ABS OLUT E MAX IMUM RAT INGS
CHARACTERISTIC
SYMBOL
RATINGS
400
600
0.6
8.0
8.8
0.32
50
50
50
10
5
1
5
0.1
-40~+125
-40~+150
UNIT
V
V
A
A
A
A
2
s
A/μs
A/μs
A/μs
A/μs
V
A
W
W
MAC97A6
MAC97A8
Repetitive Peak off-State Voltage (T
J
=25 ~125
)
V
DRM
RMS on-State Current (Full Sine Wave, T
LEAD
≤
50
Non-Repetitive Peak on-State Current
(Full Sine Wave, T
J
=25
I
2
t for Fusing (t=10ms)
)
I
T(RMS)
t=20ms
t=16.7ms
Prior to Surge)
I
TSM
I
2
t
T2+G+
T2+G-
T2-G-
T2-G+
Repetitive Rate of Rise of on-State Current After
Triggering(I
TM
=1.0A, I
G
=0.2A, dI
G
/dt=0.2A/μs)
dI
T
/dt
Peak Gate Voltage [ t=2μs (max) ]
Peak Gate Current [ t=2μs (max) ]
Peak Gate Power [ t=2μs (max) ]
Average Gate Power [ Tcase=80
Operating Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
V
GM
I
GM
P
GM
P
G(AV)
T
J
T
STG
, t=2us (max) ]
T HERMAL DAT A
PARAMETER
SYMBOL
RATINGS
150
165
UNIT
/W
/W
TO-92
SOT-223
Thermal Resistance Junction to Ambient
θ
JA
S T AT IC CHARACT ERIS T ICS
(T
J
=25
PARAMETER
, unless otherwise specified)
TEST CONDITIONS
DY NAMIC CHARACT ERIS T ICS
(T
J
=25
PARAMETER
, unless otherwise specified)
CONDITIONS
V
D
=67% of V
DRM(max)
,
Tcase=110
, Exponential
Waveform, Gate Open Circuit
V
D
=Rated V
DRM
, Tcase=50
l
TM
=0.84A, commutating
dl/dt=0.3A/ms
I
TM
=1.0A,V
D
=V
DRM(max)
,
I
G
=25mA,dI
G
/dt=5A/μs
SYMBOL
MIN
0.1
TYP
1
2
2
4
1
5
1
2
1
1.4
0.9
0.7
3
MAX UNITS
5
5
5
7
10
10
10
10
10
1.9
2
100
T2+G+
T2+G-
T2-G-
T2-G+
T2+G+
T2+G-
T2-G-
T2-G+
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
μA
Gate Trigger Current
I
GT
V
D
=12V, I
T
=0.1A
Latching Current
I
L
V
D
=12V, I
GT
=0.1A
Holding Current
On-State Voltage
I
H
V
T
V
D
=12V, I
GT
=0.1A
I
T
=0.85A
V
D
=12V,I
T
=0.1A
V
D
=V
DRM
, I
T
=0.1A, T
J
=110
V
D
=V
DRM(MAX)
, T
J
=110
Gate Trigger Voltage
V
GT
Off-State Leakage Current
I
D
SYMBOL
MIN
TYP
MAX UNITS
Critical Rate of Rise of Off-State
Voltage
dV
D
/dt
30
45
V/μs
Critical Rate of Rise of Commutation
Voltage
dVcom/dt
,
5
V/μs
Gate Controlled Turn-On Time
tgt
2
μs
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