參數(shù)資料
型號: MAC97
廠商: ON SEMICONDUCTOR
英文描述: Sensitive Gate Triacs Silicon Bidirectional Thyristors
中文描述: 敏感的門雙向硅雙向晶閘管
文件頁數(shù): 2/8頁
文件大小: 92K
代理商: MAC97
MAC97 Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
R
JC
75
°
C/W
Thermal Resistance, JunctiontoAmbient
R
JA
200
°
C/W
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
T
J
= 25
°
C
T
J
= +110
°
C
I
DRM
, I
RRM
10
100
A
A
ON CHARACTERISTICS
Peak OnState Voltage
(I
TM
=
.85 A Peak; Pulse Width
2.0 ms, Duty Cycle
2.0%)
V
TM
1.9
V
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
I
GT
5.0
5.0
5.0
7.0
mA
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100 )
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
V
GT
.66
.77
.84
.88
2.0
2.0
2.0
2.5
V
Gate NonTrigger Voltage
(V
D
= 12 V, R
L
= 100 , T
J
= 110
°
C)
All Four Quadrants
V
GD
0.1
V
Holding Current
(V
D
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
I
H
1.5
10
mA
Turn-On Time
(V
D
= Rated V
DRM
, I
TM
= 1.0 A pk, I
G
= 25 mA)
t
gt
2.0
s
DYNAMIC CHARACTERISTICS
Critical RateofRise of Commutation Voltage
(V
D
= Rated V
DRM
, I
TM
= .84 A,
Commutating di/dt = .3 A/ms, Gate Unenergized, T
C
= 50
°
C)
dV/dt(c)
5.0
V/ s
Critical Rate of Rise of OffState Voltage
(V
D
= Rated V
DRM
, T
C
= 110
°
C, Gate Open, Exponential Waveform
dv/dt
25
V/ s
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