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參數(shù)資料
| 型號： | MAC8SNG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 中文描述： | 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MAC8SNG |
MAC8SD, MAC8SM, MAC8SN
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
2.2
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
T
J
= 25
°
C
T
J
= 110
°
C
I
DRM
,
I
RRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note ) (I
TM
=
11A)
V
TM
1.85
V
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
I
GT
2.0
3.0
3.0
5.0
5.0
5.0
mA
Holding Current (V
D
= 12V, Gate Open, Initiating Current =
150mA)
I
H
3.0
10
mA
Latching Current (V
D
= 24V, I
G
= 5mA)
MT2(+), G(+)
MT2(), G()
MT2(+), G()
I
L
5.0
10
5.0
15
20
15
mA
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
V
GT
0.45
0.45
0.45
0.62
0.60
0.65
1.5
1.5
1.5
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
V
D
= 400 V, I
TM
= 3.5 A, Commutating dv/dt = 10 V /sec,
Gate Open, T
J
= 110
°
C, f = 500 Hz, Snubber: C
S
= 0.01
F
,
R
S
=15 , See Figure 16.)
di/dt
(c)
8.0
10
A/ms
Critical Rate of Rise of Off-State Voltage
(V
D
= Rate V
DRM
, Exponential Waveform, R
GK
= 510 , T
J
= 110
°
C)
2. Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
dv/dt
25
75
V/ s
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