參數(shù)資料
型號: MAC8N
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Triac (Silicon Bidirectional Thyristor)(導(dǎo)通RMS電流8A,重復(fù)截止峰值電壓800V的雙向可控硅)
中文描述: 800 V, 8 A, TRIAC, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁數(shù): 2/6頁
文件大小: 65K
代理商: MAC8N
MAC8D, MAC8M, MAC8N
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, JunctiontoCase
R
JC
2.2
°
C/W
Thermal Resistance, JunctiontoAmbient
R
JA
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current (V
D
= Rated V
DRM
, V
RRM
; Gate Open) T
J
= 25
°
C
T
J
= 125
°
C
I
DRM
,
I
RRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2), (I
TM
=
±
11 A Peak)
V
TM
1.2
1.6
V
Gate Trigger Current (Continuous DC) (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
I
GT
5.0
5.0
5.0
13
16
18
35
35
35
mA
Holding Current, (V
D
= 12 V, Gate Open, Initiating Current =
±
150 mA)
I
H
20
40
mA
Latching Current (V
D
= 24 V, I
G
= 35 mA), MT2(+), G(+); MT2(), G()
MT2(+), G()
I
L
20
30
50
80
mA
Gate Trigger Voltage (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
V
GT
0.5
0.5
0.5
0.69
0.77
0.72
1.5
1.5
1.5
V
Gate NonTrigger Voltage (V
D
= 12 V, R
L
= 100 , T
J
= 125
°
C)
MT2(+), G(+); MT2(+), G(); MT2(), G()
V
GD
0.2
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current See Figure 10.(V
D
= 400 V, I
TM
= 4.4 A,
Commutating dv/dt = 18 V/ s,Gate Open, T
J
= 125
°
C, f = 250 Hz, No Snubber)
C
L
= 10 F
L
L
= 40 mH
(di/dt)
c
6.5
A/ms
Critical Rate of Rise of Off-State Voltage (V
D
= Rated V
DRM
, Exponential Waveform,
Gate Open, T
J
= 125
°
C)
2. Indicates Pulse Test: Pulse Width
2.0 ms, Duty Cycle
2%.
dv/dt
250
V/ s
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