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參數(shù)資料
| 型號： | MAC8M |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Triac (Silicon Bidirectional Thyristor)(導(dǎo)通RMS電流8A,重復(fù)截止峰值電壓600V的雙向可控硅) |
| 中文描述： | 600 V, 8 A, TRIAC, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 65K |
| 代理商： | MAC8M |
MAC8D, MAC8M, MAC8N
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, JunctiontoCase
R
JC
2.2
°
C/W
Thermal Resistance, JunctiontoAmbient
R
JA
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current (V
D
= Rated V
DRM
, V
RRM
; Gate Open) T
J
= 25
°
C
T
J
= 125
°
C
I
DRM
,
I
RRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2), (I
TM
=
±
11 A Peak)
V
TM
1.2
1.6
V
Gate Trigger Current (Continuous DC) (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
I
GT
5.0
5.0
5.0
13
16
18
35
35
35
mA
Holding Current, (V
D
= 12 V, Gate Open, Initiating Current =
±
150 mA)
I
H
20
40
mA
Latching Current (V
D
= 24 V, I
G
= 35 mA), MT2(+), G(+); MT2(), G()
MT2(+), G()
I
L
20
30
50
80
mA
Gate Trigger Voltage (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
V
GT
0.5
0.5
0.5
0.69
0.77
0.72
1.5
1.5
1.5
V
Gate NonTrigger Voltage (V
D
= 12 V, R
L
= 100 , T
J
= 125
°
C)
MT2(+), G(+); MT2(+), G(); MT2(), G()
V
GD
0.2
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current See Figure 10.(V
D
= 400 V, I
TM
= 4.4 A,
Commutating dv/dt = 18 V/ s,Gate Open, T
J
= 125
°
C, f = 250 Hz, No Snubber)
C
L
= 10 F
L
L
= 40 mH
(di/dt)
c
6.5
A/ms
Critical Rate of Rise of Off-State Voltage (V
D
= Rated V
DRM
, Exponential Waveform,
Gate Open, T
J
= 125
°
C)
2. Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
dv/dt
250
V/ s
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| MAC8N | Triac (Silicon Bidirectional Thyristor)(導(dǎo)通RMS電流8A,重復(fù)截止峰值電壓800V的雙向可控硅) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAC8MG | 功能描述:雙向可控硅 雙向可控硅 RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC8N | 功能描述:雙向可控硅 THY 8A 800V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC8NG | 功能描述:雙向可控硅 雙向可控硅 RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC8S | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC8SD | 制造商:ON Semiconductor 功能描述:Thyristor TRIAC 400V 70A 3-Pin(3+Tab) TO-220AB Rail |
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