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參數(shù)資料
| 型號(hào)： | MAC4N |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | TRIACS, Silicon Bidirectional Thyristors |
| 中文描述： | 800 V, 4 A, TRIAC, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 115K |
| 代理商： | MAC4N |
MAC4M, MAC4N
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
2.2
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25
°
C
TJ = 125
°
C
IDRM,
IRRM
—
—
—
—
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage(1)
(ITM =
±
6.0 A)
VTM
—
1.3
1.6
V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100
)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
IGT
8.0
8.0
8.0
12
16
21
35
35
35
mA
Holding Current
(VD = 12 V, Gate Open, Initiating Current =
±
200 mA)
IH
6.0
20
35
mA
Latching Current (VD = 12 V, IG = 35 mA)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
IL
—
—
—
25
40
20
60
80
60
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100
)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
VGT
0.5
0.5
0.5
0.8
0.8
0.8
1.3
1.3
1.3
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/
μ
s, Gate Open,
TJ = 125
°
C, f = 250 Hz, CL = 5.0
μ
F, LL = 20 mH, No Snubber)
(di/dt)c
6.0
8.4
—
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 0.67 x Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125
°
C)
dv/dt
500
1500
—
V/
μ
s
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40
μ
sec; diG/dt = 200 mA/
μ
sec; f = 60 Hz
di/dt
—
—
10
A/
μ
s
(1) Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
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