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參數(shù)資料
| 型號： | MAC4DHM |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 中文描述： | 敏感的門雙向硅雙向晶閘管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 131K |
| 代理商： | MAC4DHM |
2
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25
°
C
TJ = 110
°
C
IDRM
—
—
—
—
0.01
2.0
mA
Peak On–State Voltage (1)
(ITM =
±
6.0 A)
VTM
—
1.3
1.6
Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 )
MT2(+), G(+)
MAC4DLM
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
MAC4DHM
IGT
—
—
—
—
—
—
—
—
1.8
2.1
2.4
4.2
1.8
2.1
2.4
4.2
3.0
3.0
3.0
5.0
5.0
5.0
5.0
10
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 )
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
(VD = 12 V, RL = 10 K , TJ = 110
°
C)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–); MT2(–), G(+)
VGT
0.5
0.5
0.5
0.5
0.1
0.62
0.57
0.65
0.74
0.4
1.3
1.3
1.3
1.3
—
Volts
Holding Current
(VD = 12 V, Gate Open, IT =
±
200 mA)
IH
—
1.5
15
mA
Latching Current
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
(VD = 12 V, IG = 5.0 mA)
(VD = 12 V, IG = 5.0 mA)
(VD = 12 V, IG = 5.0 mA)
(VD = 12 V, IG = 10 mA)
IL
—
—
—
—
1.75
5.2
2.1
2.2
10
10
10
10
mA
DYNAMIC CHARACTERISTICS
Characteristics
Symbol
Min
Typ
Max
Unit
Rate of Change of Commutating Current (1)
(VD = 200 V, ITM = 1.8 A, Commutating dv/dt = 1.0 V/ sec, TJ = 110
°
C,
f = 250 Hz, CL = 5.0 fd, LL = 80 mH, RS = 56 , CS = 0.03 fd)
See Figure 10
di/dt(c)
—
3.0
—
A/ms
Critical Rate of Rise of Off–State Voltage
(VD = 0.67 X Rated VDRM, Exponential Waveform,
Gate Open, TJ = 110
°
C)
(1) Pulse test: Pulse Width
≤
2.0 msec, Duty Cycle
≤
2%.
dv/dt
—
10
—
V/ s
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| MAC4DHM-001 | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC4DHMT4 | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC4DLM-001 | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC4DLMT4 | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAC4DHM_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC4DHM-001 | 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC4DHM-001G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC4DHM-1G | 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC4DHMT4 | 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
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