
2
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
CS
R
θ
JA
2.2
°
C/W
Thermal Resistance, Case to Sink
2.2 (typ)
°
C/W
Thermal Resistance, Junction to Ambient
60
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current(1)
(VD = Rated VDRM, Open Gate)
TJ = 25
°
C
TJ = 110
°
C
IDRM
—
—
—
—
10
2
μ
A
mA
Peak On-State Voltage
(ITM = 11 A Peak, Pulse Width
2 ms, Duty Cycle
2%)
VTM
—
—
1.8
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100
)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A” Suffix Only
IGT
—
—
—
—
5
10
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100
)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A” Suffix Only
(VD = Rated VDRM, TC = 110
°
C, RL = 10 k)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A” Suffix Only
VGT
—
—
0.2
0.2
—
—
—
—
2
2.5
—
—
Volts
Holding Current
(VD = 12 Vdc, ITM = 200 mA, Gate Open)
IH
—
—
15
mA
Gate-Controlled Turn-On Time
(VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA)
tgt
—
1.5
—
μ
s
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 110
°
C)
dv/dt
—
25
—
V/
μ
s
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 11.3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80
°
C)
dv/dt(c)
—
5
—
V/
μ
s
1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.
°
C
2.0
110
104
92
0
1.0
80
5.0
86
dc
IT(RMS), RMS ON-STATE CURRENT (AMP)
98
α
α
= 30
°
90
°
60
°
α
α
= CONDUCTION ANGLE
180
°
°
120
°
3.0
4.0
6.0
7.0
8.0
2.0
0
1.0
5.0
3.0
4.0
6.0
7.0
8.0
10
8.0
6.0
4.0
2.0
0
α
= CONDUCTION ANGLE
α
α
TJ
≈
110
°
C
dc
α
= 180
°
90
°
60
°
120
°
30
°
IT(RMS), RMS ON-STATE CURRENT (AMP)
(