參數(shù)資料
型號(hào): MAC228A_06
廠商: ON SEMICONDUCTOR
英文描述: Sensitive Gate Triacs Silicon Bidirectional Thyristors
中文描述: 敏感的門(mén)雙向硅雙向晶閘管
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 66K
代理商: MAC228A_06
MAC228A Series
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Repetitive OffState Voltage
,
(Note 1)
(T
J
= 40 to 110
°
C, Sine Wave, 50 to 60 Hz, Gate Open)
MAC228A4
MAC228A6
MAC228A8
MAC228A10
V
DRM,
V
RRM
200
400
600
800
V
On-State RMS Current, (T
C
= 80
°
C) Full Cycle Sine Wave 50 to 60 Hz
Peak NonRepetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, T
J
= 110
°
C)
I
T(RMS)
I
TSM
8.0
A
80
A
Circuit Fusing Considerations, (t = 8.3 ms)
I
2
t
26
A
2
s
Peak Gate Current, (t
2 s, T
C
= 80
°
C)
2 s, T
C
= 80
°
C)
2 s, T
C
= 80
°
C)
8.3 ms, T
C
= 80
°
C)
I
GM
2.0
A
Peak Gate Voltage, (t
V
GM
10
V
Peak Gate Power, (t
P
GM
20
W
Average Gate Power, (t
P
G(AV)
0.5
W
Operating Junction Temperature Range
T
J
40 to 110
°
C
Storage Temperature Range
T
stg
40 to 150
°
C
Mounting Torque
8.0
in lb
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance JunctiontoCase
R
JC
2.0
°
C/W
Thermal Resistance JunctiontoAmbient
R
JA
T
L
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current, (V
D
= Rated V
DRM
, V
RRM
; Gate Open) T
J
= 25
°
C
T
J
= 110
°
C
I
DRM
,
I
RRM
10
2.0
A
mA
ON CHARACTERISTICS
Peak On-State Voltage, (I
TM
=
11 A Peak, Pulse Width
2 ms, Duty Cycle
2%)
V
TM
1.8
V
Gate Trigger Current (Continuous DC), (V
= 12 V, R
L
= 100 )
MT2(+), G(+); MT2(+), G(); MT2(), G()
MT2(), G(+)
I
GT
5.0
10
mA
Gate Trigger Voltage (Continuous DC), (V
= 12 V, R
L
= 100 )
MT2(+), G(+); MT2(+), G(); MT2(), G()
MT2(), G(+)
V
GT
2.0
2.5
V
Gate NonTrigger Voltage (Continuous DC), (V
D
= 12 V, T
C
= 110
°
C, R
L
= 100 )
All Four Quadrants
V
GD
0.2
V
Holding Current, (V
D
= 12 Vdc, Initiating Current =
200 mA, Gate Open)
I
H
15
mA
GateControlled TurnOn Time, (V
D
= Rated V
DRM
, I
TM
= 16 A Peak, I
G
= 30 mA)
DYNAMIC CHARACTERISTICS
t
gt
1.5
s
Critical Rate of Rise of Off-State Voltage,
(V
D
= Rated V
DRM
, Exponential Waveform, T
C
= 110
°
C)
dv/dt
25
V/ s
Critical Rate of Rise of Commutation Voltage, (V
D
= Rated V
DRM
, I
TM
= 11.3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, T
C
= 80
°
C)
dv/dt(c)
5.0
V/ s
相關(guān)PDF資料
PDF描述
MAC228A4G Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC228A6G Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC228A6T Printheads for Facsimilies; Resolutions (dpi): 203; Print width (mm): 216; Resistance tolerance (O): 3000; Platen diameter (max.)(f): 14; Print speed (mm/s): 6.25 to 12.5; Logic voltage (V): 3.13 to 5.25; Supply voltage (V): 24;
MAC228A6TG Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC228A8T Sensitive Gate Triacs Silicon Bidirectional Thyristors
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