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| 型號： | MAC16N |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Bidirectional Thyristor(16A，800V三端雙向可控硅晶閘管) |
| 中文描述： | 800 V, 16 A, TRIAC, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 68K |
| 代理商： | MAC16N |
MAC16D, MAC16M, MAC16N
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
2.0
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
T
J
= 25
°
C
T
J
= 125
°
C
I
DRM
,
I
RRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I
TM
=
±
21 A Peak)
V
TM
1.2
1.6
V
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
I
GT
10
10
10
16
18
22
50
50
50
mA
Holding Current
(V
D
= 12 V, Gate Open, Initiating Current =
±
150 mA)
I
H
20
50
mA
Latching Current (V
D
= 24 V, I
G
= 50 mA)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
I
L
33
36
33
50
80
50
mA
Gate Trigger Voltage (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
V
GT
0.5
0.5
0.5
0.75
0.72
0.82
1.5
1.5
1.5
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(V
D
= 400 V, I
TM
= 6.0 A, Commutating dv/dt = 24 V/ s,
Gate Open, T
J
= 125
°
C, f = 250 Hz, No Snubber)
C
L
= 10 F
L
L
= 40 mH
(di/dt)
c
9.0
A/ms
Critical Rate of Rise of Off-State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform,
Gate Open, T
J
= 125
°
C)
2. Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
dv/dt
500
V/ s
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