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參數(shù)資料
| 型號： | MAC15N |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Bidirectional Thyristor(15A，800V三端雙向可控硅晶閘管) |
| 中文描述： | 800 V, 15 A, TRIAC, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 133K |
| 代理商： | MAC15N |
Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 1
1
Publication Order Number:
MAC15M/D
Preferred Device
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Blocking Voltage to 800 Volts
On-State Current Rating of 15 Amperes RMS at 80
°
C
Uniform Gate Trigger Currents in Three Modes
High Immunity to dv/dt — 250 V/
μ
s minimum at 125
°
C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating di/dt — 9.0 A/ms minimum at 125
°
C
Operational in Three Quadrants, Q1, Q2, and Q3
Device Marking: Logo, Device Type, e.g., MAC15M, Date Code
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage(1)
(–40 to 125
°
C, Sine Wave,
50 to 60 Hz, Gate Open)
Symbol
Value
Unit
MAC15M
MAC15N
VDRM,
VRRM
600
800
Volts
On–State RMS Current
(Full Cycle Sine Wave, 60 Hz,
TC = 80
°
C)
IT(RMS)
15
A
Peak Non-repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = 125
°
C)
ITSM
150
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
93
A2s
Peak Gate Power
(Pulse Width
≤
1.0
μ
s, TC = 80
°
C)
PGM
20
Watts
Average Gate Power
(t = 8.3 ms, TC = 80
°
C)
PG(AV)
0.5
Watts
Operating Junction Temperature Range
TJ
–40 to
+125
°
C
Storage Temperature Range
Tstg
–40 to
+150
°
C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
15 AMPERES RMS
600 thru 800 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
MAC15M
TO220AB
50 Units/Rail
MAC15N
TO220AB
TO–220AB
CASE 221A
STYLE 4
123
4
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
http://onsemi.com
50 Units/Rail
MT1
G
MT2
Preferred
devices are recommended choices for future use
and best overall value.
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| MAC15SD | Silicon Bidirectional Thyristor(15A，400V敏感門三端雙向可控硅晶閘管) |
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| MAC15SN | Silicon Bidirectional Thyristor(15A，800V敏感門三端雙向可控硅晶閘管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAC15NG | 功能描述:雙向可控硅 THY FP 15A 800V TRI RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC15S | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC15SD | 功能描述:雙向可控硅 THY FP 15A 400V TRI RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC15SDG | 功能描述:雙向可控硅 THY FP 15A 400V TRI RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC15SM | 功能描述:雙向可控硅 THY FP 15A 600V TRI RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
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