參數(shù)資料
型號(hào): MAC08BT1
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Silicon Bidirectional Thyristor(0.8A,200V三端雙向可控硅晶閘管)
中文描述: 200 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-261AA
封裝: CASE 318E-04, TO-261, 4 PIN
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 94K
代理商: MAC08BT1
Semiconductor Components Industries, LLC, 2005
December, 2005 Rev. 5
1
Publication Order Number:
MAC08BT1/D
MAC08BT1, MAC08MT1
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
other light industrial or consumer applications. Supplied in surface
mount package for use in automated manufacturing.
Features
Sensitive Gate Trigger Current in Four Trigger Modes
Blocking Voltage to 600 Volts
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
PbFree Packages are Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(Sine Wave, 50 to 60 Hz, Gate Open,
T
J
= 25 to
110
°
C)
MAC08BT1
MAC08MT1
V
DRM,
V
RRM
200
600
V
OnState Current RMS (T
= 80
°
C)
(Full Sine Wave 50 to 60 Hz)
I
T(RMS)
0.8
A
Peak Nonrepetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
C
= 25
°
C)
I
TSM
8.0
A
Circuit Fusing Considerations
(Pulse Width = 8.3 ms)
I
2
t
0.4
A
2
s
Peak Gate Power
(T
C
= 80
°
C, Pulse Width
1.0 s)
P
GM
5.0
W
Average Gate Power
(T
C
= 80
°
C, t = 8.3 ms)
P
G(AV)
0.1
W
Operating Junction Temperature Range
T
J
40 to +110
°
C
Storage Temperature Range
T
stg
40 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
PCB Mounted per Figure 1
R
JA
156
°
C/W
Thermal Resistance, JunctiontoTab
Measured on MT2 Tab Adjacent to Epoxy
R
JT
25
°
C/W
Maximum Device Temperature for
Soldering Purposes for 10 Secs Maximum
T
L
260
°
C
TRIAC
0.8 AMPERE RMS
200 thru 600 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
MT1
G
MT2
4
2
3
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
http://onsemi.com
SOT223
CASE 318E
STYLE 11
MARKING
DIAGRAM
AYW
AC08x
A
Y
W
AC08X = Device Code
x= B or M
= PbFree Package
(Note: Microdot may be in either location)
= Assembly Location
= Year
= Work Week
1
Device
Package
Shipping
ORDERING INFORMATION
MAC08BT1
SOT223
1000 Tape & Reel
MAC08MT1
SOT223
1000 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MAC08BT1G
SOT223
(PbFree)
1000 Tape & Reel
MAC08MT1G
SOT223
(PbFree)
1000 Tape & Reel
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MAC08BT1_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC08BT1G 功能描述:雙向可控硅 THY .8A 200V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
MAC08DT1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TRIAC 0.8 AMPERE RMS 200 thru 600 Volts
MAC08M 制造商:ON SEM 功能描述:
MAC08MT1 功能描述:雙向可控硅 THY .8A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB