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參數(shù)資料
| 型號(hào)： | MAAPGM0036-DIE |
| 英文描述： | 1.2-3.2 GHz 1.2W Power Amplifier |
| 中文描述： | 1月2日至3月二號(hào)頻率為1.2W功率放大器 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 260K |
| 代理商： | MAAPGM0036-DIE |
1.2-3.2 GHz 1.2W Power Amplifier
MAAPGM0036-DIE
RO-P-DS-3017 B
Preliminary Information
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
1
1. T
B
= MMIC Base Temperature
2. Adjust V
GG
between –2.4 and –1.5V to achieve indicated I
DQ
.
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50
, V
DD
= 8V, I
DQ
≈
460mA
2
, P
in
= 18 dBm
Parameter
Symbol
Typical
Units
Bandwidth
f
1.2-3.2
GHz
Output Power
POUT
31
dBm
Power Added Efficiency
PAE
30
%
1-dB Compression Point
P1dB
30
dBm
Small Signal Gain
G
20
dB
Input VSWR
VSWR
1.4:1
Gate Supply Current
I
GG
< 5
mA
Drain Supply Current
I
DD
< 725
mA
Output Third Order Intercept
OTOI
40
dBm
Noise Figure
NF
5
dB
2
nd
Harmonic
2f
-12
dBc
3
rd
Harmonic
3f
-20
dBc
5
th
Order Intermodulation Distortion
Single Carrier Level = 21 dBm
IM5
-35
dBm
3
rd
Order Intermodulation Distortion
Single Carrier Level = 21 dBm
IM3
-10
dBm
Output VSWR
VSWR
1.8:1
Features
1.2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
MSAG
MESFET Process
Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The
MAAPGM0036-Die
is a 2-stage power amplifier with on-chip bias
networks. This product is fully matched to 50 ohms on both the input and
output. It can be used as a power amplifier stage or as a driver stage in
high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each
device is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple im-
plant capability enabling power, low-noise, switch and digital FETs on a
single chip, and polyimide scratch protection for ease of use with auto-
mated manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Primary Applications
2.5-2.7 GHz MMDS
GPS
Radar
Telemetry
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