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參數(shù)資料
| 型號(hào)： | MA9264 |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Radiation Hard 8192x8 Bit Static RAM |
| 中文描述： | 輻射硬8192x8位靜態(tài)RAM |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 240K |
| 代理商： | MA9264 |
MA9264
2/15
SIGNAL DEFINITIONS
A0-12
Address input pins which select a particular eight bit word within
the memory array.
D0-7
Bidirectional data pins which serve as data outputs during a read
operation and as data inputs during a write operation.
CS
Chip Select, which, at low level, activates a read or write
operation. When at a high level it defaults the SRAM to a
prechargencondition and holds the data output drivers in a high
impedance state.
WE
Write Enable which when at a low level enables a write and holds
data output drivers in a high impedance state. When at a high
level, it enables a read.
OE
Output Enable which when at a high level holds the data output
drivers in a high impedance state. When at a low level, data
output driver state is defined by
CS
,
WE
and CE. If this signal is
not used it must be connected to VSS.
CE
Chip Enable which when at a high level allows normal operation.
When at a low level it defaults the SRAM to a precharge
condition, disables the input circuits on all input pins and holds
the data output drivers in a high impedance state. If this signal
is not used it must be connected to VDD.
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