參數(shù)資料
型號: MA729TX
廠商: PANASONIC CORP
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 0.2 A, SILICON, SIGNAL DIODE
文件頁數(shù): 1/2頁
文件大小: 32K
代理商: MA729TX
MA729
Silicon epitaxial planer type
For super high-speed switching circuit
For small current rectification
s Features
q Sealed in the S-Mini (2-pin) mold and super small type
q IF(AV)= 200mA rectification possible
q High-density mounting possible
s Absolute Maximum Ratings (Ta= 25C)
Unit : mm
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Unit
A
V
pF
ns
Condition
VR = 30V
IF = 200mA
VR = 0V, f=1MHz
IF = IR=100mA
Irr=10mA, RL=100
s Marking
Symbol
IR
VF
Ct
trr*
Note 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on charge of a human body and leakage
from the equipment used.
2. Rated input/output frequency : 1000MHz
3. * trr measuring circuit
s Electrical Characteristics (Ta= 25C)
Schottky Barrier Diodes (SBD)
MA111
A
Bias Insertion
Unit N-50BU
90%
Pulse Generator
PG-10N
Rs=50
W.F.Analyzer
SAS-8130
Ri=50
tp=2
s
tr=0.35ns
δ=0.05
IF=100mA
IR=100mA
RL=100
10%
Input Pulse
Output Pulse
Irr=10mA
tr
tp
trr
VR
IF
t
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
min
typ
30
3.0
max
50
0.55
2B
Parameter
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward current
Average forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
VR
VRRM
IFM
IF(AV)
IFSM*
Tj
Tstg
Rating
30
300
200
1
150
– 55 to +150
Unit
V
mA
A
C
Marking Symbol : 2B
1
2
Cathode
Anode
0.625
0.3
1.25
±0.1
0.5
±0.1
0.7
±0.1
2.5
±0.2
1.7
±0.1
0.4
±0.1
0.4
±0.1
0.16
+0.1
–0.06
* 50Hz sine wave, one-cycle wave, high value (non-repetitive)
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