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參數(shù)資料
| 型號(hào)： | MA4TD1110T |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Silicon Bipolar MMIC Cascadable Amplifier |
| 中文描述： | 硅雙極單片級(jí)聯(lián)放大器 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 53K |
| 代理商： | MA4TD1110T |
Silicon Bipolar MMIC Cascadable Amplifier MP4TD1110
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Device Current
Power Dissipation
2,3
RF Input Power
Junction Temperature
Storage Temperature
Thermal Resistance:
θ
jc
= 135
°
C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
°
C.
3. Derate at 7.4 mW/
°
C for Tc > 124
°
C.
Absolute Maximum
90 mA
560 mW
+20 dBm
200
°
C
-65
°
C to +200
°
C
Typical Bias Configuration
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 7.5 V
Vd = 5.5 V
Id =
Vcc - Vd
Rbias
MP4TD1110
Typical Performance Curves @ Id = 60 mA, TA = +25
°
C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
0
20
40
60
80
100
0
1
2
Vd, DEVICE VOLTAGE (V)
3
4
5
6
I
POWER GAIN vs CURRENT
4
5
6
7
8
9
10
11
12
13
14
0
20
40
60
80
100
Id, DEVICE CURRENT (mA)
G
f=0.1 GHz
f=0.5 GHz
f=1.0 GHz
f=2.0 GHz
RETURN LOSS vs FREQUENCY
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0.1
1
10
FREQUENCY (GHz)
R
INPUT
OUTPUT
P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
10
12
14
16
18
20
22
0.1
1
10
FREQUENCY (GHz)
P
O
-
Id=60mA
Id=75mA
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