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參數(shù)資料
| 型號(hào)： | MA4TD0435PIN |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 113K |
| 代理商： | MA4TD0435PIN |
Silicon Bipolar MMIC Cascadable Amplier
MA4TD0435, MA4TD0436
V3.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
2
Specications Subject to Change Without Notice.
Parameter
Ratings
Device Current
100 mA
Power Dissipation
2, 3
650 mW
RF Input Power
+13 dBm
Junction Temperature
200°C
Storage Temperature
-65°C to +200°C
Thermal Resistance:
jc=140°C/W
Absolute Maximum Ratings 1
Typical Performance Curves - I
d = 50 mA, TA =+ 25°C (unless otherwise noted)
Typical Bias Conguration
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (T
C) = 25°C.
3. Derate at 7.1 mW/°C for T
C >109°C.
Rbias
RFC (Optional)
4
3
C (DC Block)
OUT
IN
Vd = 5.25 V
1
2
Id =
Vcc - Vd
Rbias
VCC > 7 V
80
70
60
50
40
30
20
10
0
01
2
3
4
5
6
Id,
DEVICE
CURRENT
(mA)
10
9
8
7
6
5
4
3
2
20
30
40
50
60
70
80
GAIN
(dB)
FREQUENCY (GHz)
Vd DEVICE VOLTAGE (V)
0
-5
-10
-15
-20
-25
0.1
1
10
Id, DEVICE CURRENT (mA)
RETURN
LOSS
(dB)
DEVICE CURRENT vs DEVICE VOLTAGE
POWER GAIN vs CURRENT
RETURN LOSS vs FREQUENCY
18
16
14
12
10
8
6
4
2
0
0.1
1
10
P
OUT
@
1dB
(dBm)
FREQUENCY (GHz)
P
OUT @ 1dB GAIN
COMPRESSION vs FREQUENCY
MA4TD0435
MA4TD0436
f=0.1 GHz
f=1.0 GHz
f= 2.0 GHz
Id=70 mA
Id=50 mA
Id= 30mA
7.5
7.3
7.1
6.9
6.7
6.5
6.3
6.1
5.9
5.7
5.5
0.1
1
10
NOISE
FIGURE
(dB)
FREQUENCY (GHz)
NOISE FIGURE vs FREQUENCY
18
16
14
12
10
8
6
4
2
0
0.1
1
10
REVERSE
ISOLATION
(dB)
FREQUENCY (GHz)
REVERSE ISOLATION vs FREQUENCY
Id=30 mA
Id=50 mA
Id=70mA
INPUT
OUTPUT
Vd = 5.25 V
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