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參數(shù)資料
| 型號： | MA4TD0370TR |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 89K |
| 代理商： | MA4TD0370TR |
Silicon Bipolar MMIC Cascadable Amplier
MA4TD0370
V2.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
2
Specications Subject to Change Without Notice.
Parameter
Absolute Maximum
Device Current
80 mA
Power Dissipation2,3
425 mW
RF Input Power
+13 dBm
Junction Temperature
200°C
Storage Temperature
-65°C to +150°C
Thermal Resistance:
θjc = 150°C/W
Absolute Maximum Ratings1
Typical Performance Curves @ I
d = 35 mA, TA = +25°C (unless otherwise noted)
Typical Bias Conguration
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25 °C.
3. Derate at 6.7 mW/°C for Tc > 136°C.
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
Rbias
Vcc > 7 V
Vd = 5.0 V
Id = Vcc - Vd
Rbias
MA4TD0370
60
50
40
30
20
10
0
01
2
3
4
5
6
Vd, DEVICE VOLTAGE (V)
Id,
DEVICE
CURRENT
(
m
A)
14
13
12
11
10
9
8
7
6
10
15
20
25
30
35
40
45
50
55
60
GAIN
(dB)
FREQUENCY (GHz)
-5
-7
-9
-11
-13
-15
-17
-19
-21
0.1
1
10
Id, DEVICE CURRENT (mA)
RETURN
LOSS
(
d
B)
DEVICE CURRENT vs DEVICE VOLTAGE
POWER GAIN vs CURRENT
RETURN LOSS vs FREQUENCY
FREQUENCY (GHz)
16
14
12
10
8
6
4
2
0
0.01
0.1
1
10
P
OUT
-1dB
(dBm)
P
OUT @ -1dB GAIN COMPRESSION
vs FREQUENCY
Input
Output
Id=50mA
.1 GHz
.5 GHz
1.0 GHz
Id=35mA
2.0 GHz
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