參數(shù)資料
型號(hào)： MA4PBL027
英文描述： HMICTM Silicon Beam-Lead PIN Diodes
中文描述： HMICTM硅梁鉛PIN二極管
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 324K
代理商： MA4PBL027
HMIC
TM
Silicon Beam-Lead PIN Diodes
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
2
V1
MA4PBL027
Electrical Specifications at +25 °C
Symbol
C
T
Conditions
0 V, 1 MHz
2
Units
pF
Typ.
0.048
Max.
C
T
-3 V, 1 MHz
2
pF
0.039
C
T
-10 V, 1 MHz
2
pF
0.033
0.040
C
T
-40 V, 1 MHz
2
pF
0.030
0.040
C
T
0 V, 100 MHz
2,4
pF
0.043
C
T
-3 V, 100 MHz
2,4
pF
0.033
C
T
-10V, 100 MHz
2,4
pF
0.031
C
T
-40V, 100 MHz
2,4
pF
0.027
C
T
0 V, 1 GHz
2,4
pF
0.039
C
T
-3 V, 1 GHz
2,4
pF
0.032
C
T
-10 V, 1 GHz
2,4
pF
0.029
C
T
-40 V, 1 GHz
2,4
pF
0.026
R
S
10 mA, 100 MHz
3,4
3.8
R
S
20 mA, 100 MHz
3,4
3.0
R
S
10 mA, 1 GHz
3,4
3.5
R
S
20 mA, 1 GHz
3,4
2.8
V
F
20 mA
V
0.917
1.1
V
R
-10
μ
A
V
110
I
R
-40 V
nA
1.0
I
R
-90 V
uA
-
10.0
T
L
+10 mA / -6 mA
ns
110
2. Total capacitance,
C
T
, is equivalent to the sum of Junction Capacitance ,Cj, and Parasitic Capacitance, Cpar.
3. Series resistance R
S
is equivalent to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic Resistance)
4. Rs and C
T
are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-186 package with conductive silver epoxy.
NOTES:
Die Handling
All semiconductor chips should be handled with care
to avoid damage or contamination from perspiration
and skin oils. The use of plastic tipped tweezers or
vacuum pickups is strongly recommended for
individual components. Bulk handling should insure
that abrasion and mechanical shock are minimized.
Die Bonding
These devices were designed to be inserted onto
hard or soft substrates. Recommended methods of
attachment include thermocompression bonding, par-
allel-gap welding, and electrically conductive silver epoxy.
See Application Note M541, “Bonding and
Handling Procedures for Chip Diode Devices” for
More Detailed Assembly Instructions.
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