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參數(shù)資料
| 型號： | MA4GP901 |
| 元件分類： | PIN二極管 |
| 英文描述： | GALLIUM ARSENIDE, PIN DIODE |
| 封裝： | CASE 992, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 91K |
| 代理商： | MA4GP901 |
GaAs Beam-Lead
PIN Diodes
MA4GP900 Series
V3.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
1
Specications Subject to Change Without Notice.
Electrical Specications at 25°C
Notes:
1. Capacitance is determined by measuring isolation in a 50 Ohm line at 10 GHz.
2. Forward series resistance is measured at 20 mA in a 50 Ohm line at
10 GHz.
3. Reverse current will not exceed 10 microamperes at the voltage rating.
4. Switching speed is measured between 10% and 90% points in a series mounted
switch.
5. Carrier lifetime is measured at 10 mA.
Features
q
Superior High Speed Microwave Switching Diode
q
2-3 Nanosecond Switching When Driven From
TTL Logic
q
Capacitance as Low as 0.025 pF Specied at 10 GHz
q
Series Resistance as Low as 2 Ohms Specied at
10 GHz
q
Mechanically Rugged Construction— 10 Gram
Beam Strength
Description
The MA4GP900 family of Gallium Arsenide beam lead
PIN diodes offers superior performance for high speed
microwave switching applications. The high carrier
mobility of Gallium Arsenide results in low series resis-
tance and fast switching. The low carrier density in the
intrinsic region results in zero bias punch through and
high off impedance at zero bias.
Air bridge technology reduces the beam parasitic capaci-
tance and helps to achieve very small total capacitance.
The use of a semi-insulating Gallium Arsenide substrate
allows larger, stronger beam leads. Beam strength is in
excess of 10 grams.
Case Style
992
Electrical Specications
Nominal Characteristics
Forward
2
Maximum
1
Resistance
Capacitance
at 20 mA
at 10 GHz
and 10 GHz
Voltage3
Switching
4
Carriers
Model
and 0 Volts
(Ohms)
Rating
Speed
Lifetime
5
Number
(pF)
Max.
Nom.
(Volts)
(ns)
MA4GP901
0.07
2.0
1.5
50
3
5
MA4GP902
0.025
4.5
3.0
50
2
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