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參數(shù)資料
| 型號： | MA4E2054L-1261 |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, VHF-X BAND, MIXER DIODE |
| 封裝： | ROHS COMPLIANT PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 53K |
| 代理商： | MA4E2054L-1261 |
1
Low Barrier Schottky Chip
M/A-COM Products
Rev. V7
MA4E2054L-1261
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to
the product(s) or information contained herein without notice.
Features
Low I
R (<100nA @ 1V, <500nA @ 3V)
Designed for High Volume, Low Cost Detector
and Mixer Applications
Low Noise Figure: 5.7 dB (SSB) at X-Band
High Detector Sensitivity: -55 dBm TSS
Low Capacitance: 0.14 pF (typ.)
Low 1/F Noise
RoHS* Compliant
Description and Applications
The MA4E2054L-1261 diode is a low barrier, n-type,
silicon Schottky device.
It is useful as a high
performance mixer or detector diode at frequencies
from VHF through X-band.
These chips can be
used in automatic assembly processes due to their
0.004” gold bond pads and sturdy construction.
Single Junction Chip Outline
MA4E2054
Typ.
0.014”
0.36
Typ.
0.014”
0.36
Typ.
0.004”
0.10
inches
mm
Maximum Ratings
1.
At 25 °C case temperature, Derate linearly to zero watts at
150 °C case temperature.
Parameter
Symbol Unit
Values
Operating Temperature
TOP
°C
-65 to +150
Storage Temperature
TSTG
°C
-65 to +150
Incident RF Power (CW)
PT
mW
75
1
Reverse Voltage @ 25 °C
VR
V
3
Forward Current
IF
mA
20
ESD Rating
2
-
Class 0
Typical RF Performance @ +25 °C
Parameter
Condition
Symbol Specification
Breakdown Voltage
IR = 10 μA
VB
3.0 V min.
Reverse Leakage Current
VR = 1 V
IR
100 nA max.
Reverse Leakage Current
VR = 3 V
IR
500 nA max.
Total Capacitance
VR = 0 V
f = 1 MHz
CT
0.16 pF max.
Dynamic Resistance
2
IF = 10 mA
RD
17 Ohms max.
Forward Voltage
IF = 1 mA
VF
250 mV min.
350 mV min.
2.
Human Body Model
Parameter
Conditions
Typical
Mixer Noise Figure
3
f = 9.375 GHz
LO = 0 dBm
5.7 dB
(SSB)
IF Impedance
IF = 30 MHz
200 ohms
Tangential Signal
Sensitivity
4
IF = 20 mA
BW = 2 MHz
Video NF = 1.5 dB
-55 dBm
Detector Output, Voltage
at -30 dBm
4
RL = 100K Ohms
IF = 20 μA
20 mV
Detector Output
Voltage at -30 dBm
4
RL = 1M Ohm
Zero Bias
20 mV
3. Fixture tuned to 9.375 GHz.
4. Fixture tuned to 2.5 GHz. See figures on page 3 for untuned
fixture performance.
2. RD = RS + RJ where RJ =
26
IF (in mA)
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
Electrical Specifications @ +25 °C
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