參數(shù)資料
型號: MA3X721D
廠商: PANASONIC CORP
元件分類: 參考電壓二極管
英文描述: Silicon epitaxial planar type
中文描述: 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236
封裝: ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 47K
代理商: MA3X721D
1
Schottky Barrier Diodes (SBD)
MA3X721D, MA3X721E
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
I
Features
Two MA3X721s are contained in one package
Allowing to rectify under (I
F(AV)
= 200 mA) condition
(for the single diode)
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
V
RRM
I
FM
30
V
Repetitive peak reverse voltage
30
V
Peak forward
current
Single
Double
*1
300
mA
220
Average forward
current
Single
Double
*1
I
F(AV)
200
mA
130
Non-repetitive peak
forward surge current
*2
Double
*1
Single
I
FSM
1
A
0.7
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
JEDEC : TO-236
EIAJ : SC-59
Mini Type Package (3-pin)
Note) *1: Value per chip
*2: The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
Internal Connection
Marking Symbol
MA3X721D
: M3H
MA3X721E
: M3F
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
= 30 V
I
F
= 200 mA
V
R
= 10 V, f
= 1 MHz
50
μ
A
Forward voltage (DC)
V
F
C
t
0.55
V
Terminal capacitance
30
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA
I
rr
= 10 mA, R
L
= 100
3
ns
I
Electrical Characteristics
T
a
=
25
°
C
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 1 000 MHz
3. * : t
rr
measuring instrument
MA3X721D MA3X721E
Cathode
Cathode
Anode
1
2
3
Anode
Anode
Cathode
D
E
2.8
+
0.2
0.3
+
0.25
1.5
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
0
0
1
+
0
0
0
0.4
±
0.2
0
0
+
0
0
1
0.1 to 0.3
2
+
0
0
1
2
3
1
3
2
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
r
=
0.35 ns
δ
=
0.05
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
10%
Input Pulse
Output Pulse
I
=
10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
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