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參數(shù)資料
| 型號： | MA3U755 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon epitaxial planar type (cathode common) |
| 中文描述： | 5 A, 60 V, SILICON, RECTIFIER DIODE |
| 封裝： | U-G1, SC-63, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 39K |
| 代理商： | MA3U755 |
1
Schottky Barrier Diodes (SBD)
MA3U755
Silicon epitaxial planar type (cathode common)
For switching power supply
I
Features
Small U-type package and allowing surface mounting
Low forward rise voltage V
F
Cathode common dual type
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
1 : Anode
2 : Cathode
(Common)
3 : Anode
U-Type Package
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
I
F(AV)
60
V
Average forward current
5
A
Non-repetitive peak forward
surge current
*
I
FSM
40
A
Junction temperature
T
j
40 to
+
125
40 to
+
125
°
C
°
C
Storage temperature
T
stg
Note) * : Half sine-wave: 10 ms/cycle
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
= 60 V, T
C
= 25
°
C
I
F
= 2.5 A, T
C
= 25
°
C
Between junction and case
1.0
mA
Forward voltage (DC)
V
F
0.58
V
Thermal resistance
*
R
th(j-c)
12.5
°
C/W
I
Electrical Characteristics
T
a
=
25
°
C
Note) Rated input/output frequency: 1 000 MHz
* : T
C
= 25
°
C
6.5
±
0.1
5.3
±
0.1
4.35
±
0.1
4.6
±
0.1
2.3
±
0.1
0.75
±
0.1
1
2
3
0.93
±
0.1
2
±
0
0
1
±
0
7
±
0
1
±
0
2.3
±
0.1
0.5
±
0.1
0.5
±
0.1
0.1
±
0.05
1.0
±
0.1
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PDF描述 |
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| MA3V175D | Silicon epitaxial planar type |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MA3U760 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon epitaxial planar type (cathode common) |
| MA3V175D | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon epitaxial planar type |
| MA3V175E | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon epitaxial planar type |
| MA3V176D | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon epitaxial planar type |
| MA3V176E | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon epitaxial planar type |
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